CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
批准号:
0093742
负责人:
Joan Redwing
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-03-01 至 2007-11-30
中文摘要
这一职业计划的重点是研究和利用AlGaInN基异质结构中的极化感应电场,以开发应变工程电子器件。这些器件提供了进一步将GaN基电子产品的性能范围扩展到更高频率和功率的潜力。金属有机气相外延(MOVPE)将用于第三族氮化物的外延生长。将开发一种原位光学技术来探测异质结生长过程中薄膜应力和应变的演变和大小。MOVPE生长的替代氮源将作为提高含铟合金质量的潜在途径进行研究。这些技术和工具将用于制备应变工程AlGaN/InGaN/AlGaInN高电子迁移率晶体管结构。生长后表征(X射线衍射、透射电子显微镜、光致发光、霍尔测量)将与实时应力测量相结合,以研究应力松弛及其对异质结微结构和电学性质的影响。设备制造和测试将与政府和工业设备开发小组合作进行,以提供一条快速评估这项技术并将其转化为设备和系统应用的途径。该项目的教育目标与研究紧密结合。将开发一个虚拟MOVPE实验室,并将其用于课程作业,以提供一种新的学习工具,以亲密和互动的方式将材料属性与加工条件联系起来。其他教育活动包括本科生和研究生课程开发、本科生研究机会和与年轻女性的接触。
英文摘要
The focus of this CAREER project is to study and exploit polarization-induced electric fields in AlGaInN-based heterostructures for the development of strain-engineered electronic devices. These devices offer the potential to further expand the performance range of GaN-based electronics to higher frequency and power. Metalorganic vapor phase epitaxy (MOVPE) will be used for epitaxial growth of group III-nitrides in this program. An in-situ optical technique will be developed to probe the evolution and magnitude of thin film stress and strain during heterostructure growth. Alternative nitrogen sources for MOVPE growth will be investigated as a potential route to improving the quality of indium-containing alloys. The techniques and tools will be used to fabricate strain-engineered AlGaN/InGaN/AlGaInN high electron mobility transistor structures. Post-growth characterization (x-ray diffraction, transmission electron microscopy, photoluminescence, Hall measurements) will be combined with real time stress measurements to study stress relaxation and its impact on the microstructural and electrical properties of the heterostructures. Device fabrication and testing will be carried out in collaboration with government and industrial device development groups to provide a pathway for rapid evaluation and transfer of this technology into device and systems applications. The educational goals of the project are closely integrated to the research. A virtual MOVPE laboratory will be developed and used in course assignments to provide a novel learning tool that connects material properties with processing conditions in an intimate and interactive fashion. Additional educational activities include undergraduate and graduate curriculum development, undergraduate research opportunities, and outreach to young women.
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