NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
批准号:
0103068
负责人:
Joan Redwing
金额:
$145.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-07-01 至 2006-06-30
中文摘要
该提案是应“纳米科学与工程”(NSF 00-119)的要求提交的。该项目致力于纳米尺度对半导体纳米线的合成和性能的影响。一个通用的,基于模板的方法来合成金属/半导体/金属纳米线将开发,利用纳米多孔膜作为基板的纳米线组装使用半导体气-液-固生长和金属电沉积。该方法提供了合成夹在具有受控直径和长度的单个纳米线中的接触金属段之间的单晶半导体结构的能力。在从膜移除之后,场辅助组装方法将用于将悬浮在溶液中的纳米线吸引并对准到衬底上的预图案化接触垫上。电场用于使纳米线均匀化并通过介电泳诱导排列。现场组装将用于对准和定位大面积接触焊盘上的大量纳米线,以进行电气表征。制造研究将集中在两种材料,硅和砷化镓,使间接和直接间隙半导体的纳米级效应的研究。将制作尺寸从数百纳米到数十埃的结构,并对其进行表征,以研究长度尺度对纳米线物理性质的影响。气-液-固生长方法在纳米多孔膜的发展将包括气相传输,反应动力学,成核和晶体生长在纳米圆柱几何形状的研究。在单个纳米线内的金属/半导体结的制造将被用于在这些结构和探针相平衡,界面反应动力学,费米能级钉扎和小尺寸结构中的欧姆和肖特基接触特性的工程纳米接触。快速定位和测量大量单个纳米线的能力将用于进行电传输的详细测量。带结构和载流子散射的理论研究,在限制的几何形状将与实验工作一起进行,以提供深入的实验结果。一个在半导体晶体生长、金属/半导体接触、纳米线自组装和表征以及纳米结构电子特性理论方面具有特定专长的跨学科团队将开展研究。该团队包括来自材料科学与工程,电气工程和物理学的教师。研究的交织结构和研究人员的密切物理接近将使研究生的共同建议和个人论文项目的发展,包括纳米级合成,组装,表征和理论的一系列主题。该项目还将包括与一名高中物理教师共同编写教育模块,旨在向普通受众介绍纳米技术概念。这些模块将被团队成员用于他们目前的K-12教育和推广活动,以及针对科学和工程领域少数民族和女性招聘的其他校园计划。该项目涉及材料科学专题领域的基础研究问题,具有高度的技术相关性。该计划的一个重要特点是通过在一个基本和技术上重要的领域对学生进行培训来整合研究和教育。该项目旨在通过前沿研究环境所带来的独特教育体验,培养学生强大的技术,沟通和组织/管理技能。将有本科生积极参与该计划,并正式强调发展有效的口头和书面沟通技巧。该项目由DMR/EM,CTS/CRP和CTS/FPH部门/计划共同支持。
英文摘要
This proposal was submitted in response to the solicitation "Nanoscale Science and Engineering" (NSF 00-119). The project addresses nanoscale effects on synthesis and properties of semiconductor nanowires. A versatile, template-based approach to the synthesis of metal/semiconductor/metal nanowires will be developed, utilizing nanoporous membranes as substrates for nanowire assembly using semiconductor vapor-liquid-solid growth and metal electrodeposition. This approach provides the ability to synthesize single crystal semiconductor structures sandwiched between contact metal segments in a single nanowire with controlled diameters and lengths. After removal from the membrane, a field assisted assembly method will be used to attract and align the nanowires suspended in solution on to pre-patterned contact pads on a substrate. An electric field is used to polarize the nanowires and induce alignment via dielectrophoresis. Field assembly will be used to align and position large numbers of nanowires on large area contact pads for electrical characterization. Fabrication studies will focus on two materials, Si and GaAs, enabling a study of nanoscale effects in indirect and direct gap semiconductors. Structures with dimensions ranging from hundreds of nanometers to tens of angstroms will be produced and characterized to study the impact of length scale on the physical properties of nanowires. The development of vapor-liquid-solid growth methods in nanoporous membranes will encompass a study of vapor phase transport, reaction kinetics, nucleation and crystal growth in nanoscale cylindrical geometries. The fabrication of metal/semiconductor junctions within individual nanowires will be used to engineer nanocontacts in these structures and probe phase equilibria, interfacial reaction kinetics, Fermi level pinning and ohmic and Schottky contact characteristics in small dimensional structures. The ability to rapidly position and measure large numbers of individual nanowires will be used to carry out detailed measurements of electrical transport. Theoretical studies of band structure and carrier scattering in restricted geometries will be carried out in conjunction with the experimental work to provide insight into the experimental findings. An interdisciplinary team with specific expertise in semiconductor crystal growth, metal/semiconductor contacts, nanowire self-assembly and characterization and the theory of nanostructure electronic properties will carry out the research. The team includes faculty members from Materials Science and Engineering, Electrical Engineering and Physics. The interwoven structure of the research and the close physical proximity of the investigators will enable co-advising of graduate students and the development of individual thesis projects that encompass a range of topics in nanoscale synthesis, assembly, characterization and theory. The project will also include the preparation of educational modules, developed in conjunction with a high school physics instructor, that are designed to introduce concepts in nanotechnology to a general audience. The modules will be used by team members in their current K-12 education and outreach activities and in additional on-campus programs that target minority and female recruitment in science and engineering.%%% The project addresses basic research issues in a topical area of materials science with high technological relevance. An important feature of the program is the integration of research and education through the training of students in a fundamentally and technologically significant area. The project is designed to develop strong technical, communication, and organizational/management skills in students through unique educational experiences made possible by a forefront research environment. There will be active involvement of undergraduates in the program and formal emphasis on developing effective oral and written communication skills. The project is co-supported by the DMR/EM, CTS/CRP, and CTS/FPH Divisions/Programs.***
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Graphene Encapsulated Growth of 2D Materials
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资助金额:$4.98万
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PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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Acquisition of an MOVPE System for Electronic Materials Research and Education
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海外基金