NIRT: Semiconductor Nanowire Electronics
NIRT: Semiconductor Nanowire Electronics
批准号:
0609282
负责人:
Joan Redwing
金额:
$100.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2006
资助国家:
美国
项目状态:
已结题
起止时间:
2006-07-01 至 2011-12-31
中文摘要
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英文摘要
NIRT: Semiconductor Nanowire ElectronicsPI: J.M. RedwingObjective This NIRT proposal focuses on an investigation of fundamental issues in the physics and fabrication of group IV (Si, Ge, SixGe1-x) semiconductor nanowire-based devices. The studies focus on two specific device types: field-effect transistors and axial p-n homojunction diodes which will be used as diagnostic structures to study scaling effects on device performance. Intellectual MeritThe research tightly couples device modeling and simulation with detailed experimental studies to extract carrier mobility and depletion effects in nanowire devices. This capability will be used to study scattering mechanisms and the effects of orientation, surfaces, interfaces and impurities on carrier mobility in nanowire field-effect devices in the low-field regime and probe the transition from bulk to 1D behavior as the wire diameter is scaled down. Similar studies will investigate changes in diode properties with decreasing wire diameter in axial p-n homojunctions. Synthesis experiments will be combined with nanoscale characterization tools to examine size-related effects on nanowire growth and processing. Broader ImpactThe research results are anticipated to be broadly applicable both to scaled Si CMOS technology and the rapidly emerging field of nanowire-based devices. Potential areas of impact include future generation logic devices, high speed transistors, resonant tunneling devices, chemical and biological sensors and devices for solar and thermal energy conversion. An industrial internship program is planned with Intel Corporation to provide graduate students working on the project with the opportunity to gain firsthand exposure to manufacturing and development issues in nanotechnology implementation. Undergraduates will participate in the program through REU sites and special programs at Penn State targeted at female and minority students. A sustained mentoring program for middle school/high school girls will be developed providing hands-on workshops, field trips and career exploration activities designed to build confidence in math and science and exposure to careers in science and technology.
期刊论文(0)
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会议论文
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2023
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:2039351
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项目类别:Cooperative Agreement
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资助金额:$2010.0万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
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批准号:2138270
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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批准号:2029729
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项目类别:Standard Grant
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资助金额:$6.54万
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财政年份:2020
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负责人:Joan Redwing
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依托单位:
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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批准号:1917552
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:2019
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负责人:Joan Redwing
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依托单位:
Graphene Encapsulated Growth of 2D Materials
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批准号:1808900
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项目类别:Standard Grant
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资助金额:$43.0万
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财政年份:2018
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负责人:Joan Redwing
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依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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依托单位:
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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批准号:1414236
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
Acquisition of an MOVPE System for Electronic Materials Research and Education
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批准号:0076312
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2000
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
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依托单位:
海外基金