NIRT: Semiconductor Nanowire Electronics

NIRT：半导体纳米线电子学PI：J.M.Redwing本NIRT提案的重点是研究第四族(Si，Ge，SixGe1-x)半导体纳米线器件的物理和制造中的基本问题。这些研究集中在两种特定的器件类型：场效应晶体管和轴向p-n同质结二极管，它们将被用作诊断结构来研究尺度效应对器件性能的影响。智能优点该研究将设备建模和模拟与详细的实验研究紧密结合起来，以提取纳米线设备中的载流子迁移率和耗尽效应。这一能力将被用来研究低场下纳米线场效应器件中的散射机制以及取向、表面、界面和杂质对载流子迁移率的影响，并探索随着纳米线直径的减小从体相到一维行为的转变。类似的研究将调查二极管特性随着同质结轴向p-n结中导线直径的减小而变化。合成实验将与纳米级表征工具相结合，以检查与尺寸相关的对纳米线生长和加工的影响。更广泛的影响这些研究成果预计将广泛适用于规模化的硅CMOS技术和迅速崛起的基于纳米线的设备领域。潜在的影响领域包括未来一代逻辑器件、高速晶体管、共振隧道器件、化学和生物传感器以及用于太阳能和热能转换的器件。英特尔公司计划开展一项工业实习计划，为从事该项目的研究生提供直接接触纳米技术实施中的制造和开发问题的机会。本科生将通过REU网站和宾夕法尼亚州立大学针对女性和少数族裔学生的特别项目参与该项目。将为初中/高中女生制定持续的辅导计划，提供实践讲习班、实地考察和职业探索活动，旨在建立对数学和科学的信心，并接触科学和技术职业。

NIRT: Semiconductor Nanowire ElectronicsPI: J.M. RedwingObjective This NIRT proposal focuses on an investigation of fundamental issues in the physics and fabrication of group IV (Si, Ge, SixGe1-x) semiconductor nanowire-based devices. The studies focus on two specific device types: field-effect transistors and axial p-n homojunction diodes which will be used as diagnostic structures to study scaling effects on device performance. Intellectual MeritThe research tightly couples device modeling and simulation with detailed experimental studies to extract carrier mobility and depletion effects in nanowire devices. This capability will be used to study scattering mechanisms and the effects of orientation, surfaces, interfaces and impurities on carrier mobility in nanowire field-effect devices in the low-field regime and probe the transition from bulk to 1D behavior as the wire diameter is scaled down. Similar studies will investigate changes in diode properties with decreasing wire diameter in axial p-n homojunctions. Synthesis experiments will be combined with nanoscale characterization tools to examine size-related effects on nanowire growth and processing. Broader ImpactThe research results are anticipated to be broadly applicable both to scaled Si CMOS technology and the rapidly emerging field of nanowire-based devices. Potential areas of impact include future generation logic devices, high speed transistors, resonant tunneling devices, chemical and biological sensors and devices for solar and thermal energy conversion. An industrial internship program is planned with Intel Corporation to provide graduate students working on the project with the opportunity to gain firsthand exposure to manufacturing and development issues in nanotechnology implementation. Undergraduates will participate in the program through REU sites and special programs at Penn State targeted at female and minority students. A sustained mentoring program for middle school/high school girls will be developed providing hands-on workshops, field trips and career exploration activities designed to build confidence in math and science and exposure to careers in science and technology.