Acquisition of an MOVPE System for Electronic Materials Research and Education
Acquisition of an MOVPE System for Electronic Materials Research and Education
批准号:
0076312
负责人:
Joan Redwing
金额:
$15.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-09-01 至 2002-08-31
中文摘要
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英文摘要
0076312RedwingThis award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University for the epitaxial growth of aluminum-gallium-indium nitride (Al,Ga,In)N alloys. The MOVPE system is designed to facilitate a combination of fundamental studies of transport, growth chemistry, nucleation and thin film stress evolution within the context of a small-scale production MOVPE tool. The MOVPE reactor is custom designed to incorporate an in-situ optical stress measurement system for real time measurement of sample curvature and growth rate. The instrument will permit controlled mixing of Group III and V sources to enable a study of homogenous chemistry effects on film properties. The facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for the education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.This award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University. The equipment is designed to facilitate a combination of fundamental growth studies within the context of a small-scale production MOVPE tool. It will enable in-situ measurements of thin film stress and growth rate using high-resolution laser reflectometry. The MOVPE facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.
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Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2023
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:2039351
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项目类别:Cooperative Agreement
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资助金额:$2010.0万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
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批准号:2138270
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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批准号:2029729
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项目类别:Standard Grant
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资助金额:$6.54万
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财政年份:2020
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负责人:Joan Redwing
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依托单位:
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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批准号:1917552
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项目类别:Standard Grant
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资助金额:$3.0万
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财政年份:2019
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负责人:Joan Redwing
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依托单位:
Graphene Encapsulated Growth of 2D Materials
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批准号:1808900
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项目类别:Standard Grant
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资助金额:$43.0万
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财政年份:2018
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负责人:Joan Redwing
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依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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依托单位:
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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批准号:1414236
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
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依托单位:
国内基金
海外基金
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批准年份:1993
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依托单位: