课题基金 / 基金详情

Acquisition of an MOVPE System for Electronic Materials Research and Education

Acquisition of an MOVPE System for Electronic Materials Research and Education
采购用于电子材料研究和教育的 MOVPE 系统
批准号:
0076312
负责人:
Joan Redwing
金额:
$15.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-09-01 至 2002-08-31

项目摘要

项目成果

Joan Redwing的其他基金

相似基金

相关文献

中文摘要
翻译
点击翻译按钮获取中文摘要
英文摘要
0076312RedwingThis award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University for the epitaxial growth of aluminum-gallium-indium nitride (Al,Ga,In)N alloys. The MOVPE system is designed to facilitate a combination of fundamental studies of transport, growth chemistry, nucleation and thin film stress evolution within the context of a small-scale production MOVPE tool. The MOVPE reactor is custom designed to incorporate an in-situ optical stress measurement system for real time measurement of sample curvature and growth rate. The instrument will permit controlled mixing of Group III and V sources to enable a study of homogenous chemistry effects on film properties. The facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for the education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.This award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University. The equipment is designed to facilitate a combination of fundamental growth studies within the context of a small-scale production MOVPE tool. It will enable in-situ measurements of thin film stress and growth rate using high-resolution laser reflectometry. The MOVPE facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
MIP: 2D Crystal Consortium (MIP-2DCC)
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
国内基金
海外基金
Si基N极性Ga(Al)N薄膜MOVPE生长的极性控制及表面动力学过程研究
  • 批准号:
    62004049
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    24.0万元
  • 批准年份:
    2020
  • 负责人:
    李成果
  • 依托单位:
InN基窄带隙半导体材料的加压MOVPE生长与物性研究
  • 批准号:
    61106003
  • 项目类别:
    青年科学基金项目
  • 资助金额:
    30.0万元
  • 批准年份:
    2011
  • 负责人:
    张源涛
  • 依托单位:
MOVPE长波长InAs/GaAs量子点及其激光器件的研究
  • 批准号:
    60476009
  • 项目类别:
    面上项目
  • 资助金额:
    23.0万元
  • 批准年份:
    2004
  • 负责人:
    朱洪亮
  • 依托单位:
锑化镓及其固溶体的MOVPE热力学分析与生长
  • 批准号:
    69376008
  • 项目类别:
    面上项目
  • 资助金额:
    6.5万元
  • 批准年份:
    1993
  • 负责人:
    陆大成
  • 依托单位: