Acquisition of an MOVPE System for Electronic Materials Research and Education
Acquisition of an MOVPE System for Electronic Materials Research and Education
批准号:
0076312
负责人:
Joan Redwing
金额:
$15.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2000
资助国家:
美国
项目状态:
已结题
起止时间:
2000-09-01 至 2002-08-31
中文摘要
该奖项为宾州州立大学获得金属有机气相外延(MOVPE)系统提供了部分支持,该系统用于铝镓铟氮化(Al,Ga,In)N合金的外延生长。MOVPE系统旨在促进在小规模生产MOVPE工具的背景下进行输运、生长化学、成核和薄膜应力演化的基础研究。MOVPE反应器是定制设计的,包含一个原位光学应力测量系统,用于实时测量样品曲率和生长速率。该仪器将允许控制混合第三组和第五组源,以便研究均匀化学对薄膜性能的影响。该设施将大大提高宾夕法尼亚州立大学电子和光子材料的研究和教育机会。它将为材料科学与工程、电气工程和跨学院材料研究生研究项目的研究生和本科生提供跨学科的教育和培训资源。外延生长设施将用于开发电子和光子材料制造和表征以及半导体晶体生长的本科和研究生课程的课堂活动和问题集。该奖项为宾州州立大学获得金属有机气相外延(MOVPE)系统提供了部分支持。该设备旨在促进在小型生产MOVPE工具的背景下进行基础生长研究的结合。它将能够使用高分辨率激光反射仪对薄膜应力和生长速率进行原位测量。MOVPE设施将大大提高宾夕法尼亚州立大学电子和光子材料的研究和教育机会。它将为材料科学与工程、电气工程和跨学院材料研究生研究项目的研究生和本科生提供跨学科的教育和培训资源。外延生长设施将用于开发电子和光子材料制造和表征以及半导体晶体生长的本科和研究生课程的课堂活动和问题集。
英文摘要
0076312RedwingThis award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University for the epitaxial growth of aluminum-gallium-indium nitride (Al,Ga,In)N alloys. The MOVPE system is designed to facilitate a combination of fundamental studies of transport, growth chemistry, nucleation and thin film stress evolution within the context of a small-scale production MOVPE tool. The MOVPE reactor is custom designed to incorporate an in-situ optical stress measurement system for real time measurement of sample curvature and growth rate. The instrument will permit controlled mixing of Group III and V sources to enable a study of homogenous chemistry effects on film properties. The facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for the education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.This award provides partial support for the acquisition of a metalorganic vapor phase epitaxy (MOVPE) system at Penn State University. The equipment is designed to facilitate a combination of fundamental growth studies within the context of a small-scale production MOVPE tool. It will enable in-situ measurements of thin film stress and growth rate using high-resolution laser reflectometry. The MOVPE facility will significantly enhance research and educational opportunities in electronic and photonic materials at Penn State. It will provide an interdisciplinary resource for education and training of graduate and undergraduate students from Materials Science and Engineering, Electrical Engineering and the Intercollege Graduate Research Program in Materials. The epitaxial growth facility will be used to develop class activities and problem sets for undergraduate and graduate courses on electronic and photonic materials fabrication and characterization and semiconductor crystal growth.
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会议论文
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批准号:2333144
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资助金额:$0.7万
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财政年份:2023
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批准号:2138270
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资助金额:$0.7万
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负责人:Joan Redwing
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2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
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Graphene Encapsulated Growth of 2D Materials
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资助金额:$43.0万
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负责人:Joan Redwing
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NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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依托单位:
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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批准号:1414236
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
-
财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
-
财政年份:2001
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负责人:Joan Redwing
-
依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
-
财政年份:2001
-
负责人:Joan Redwing
-
依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
-
依托单位:
国内基金
海外基金
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