E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
E2CDA: Type I: Collaborative Research: A Fast 70mV Transistor Technology for Ultra-Low-Energy Computing
批准号:
1640053
负责人:
Benton Calhoun
金额:
$43.49万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2016
资助国家:
美国
项目状态:
已结题
起止时间:
2016-10-01 至 2020-09-30
中文摘要
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英文摘要
Microprocessors containing billions of transistor switches are at the heart of PCs, cell phones, computer servers answering our internet searches, and supercomputers modeling the weather and designing new drugs and aircraft. Modern machinery is controlled by microprocessors; a typical car uses 50. After 50 years of rapid improvement, since 2000 progress has stalled, primarily because the transistors consume too much energy when they switch. As transistors are made smaller, more fit on a chip, and the energy consumed increases. The battery is drained quickly and chip becomes hot. Slowing the switching reduces heating, but then the software runs slowly. In this program, a new transistor design will be investigated. If successful, these transistors will consume 100 times less switching energy, allowing faster, more powerful chips. The challenge is the power supply voltage; reducing the voltage by 2:1 reduces the switching energy 4:1. Between ~1990-2005, voltages were reduced from 5 to 1 Volt. Unfortunately, with normal (MOS) transistor switches, below ~0.7 Volts the transistor's switching becomes imperfect, with the transistor not turning completely off. This finite off-state leakage current increases energy consumption, hence it has not been possible to supplies much below 0.7 Volts. Ten years ago, tunnel transistors were proposed, as these can turn off nearly completely even at supplies as low as 0.3 Volts. Unfortunately, tunnel transistors do not turn on well, and microprocessors using them will therefore operate slowly. This limitation becomes much worse if the supply is dropped to 0.1 Volts. This program will research a new design, the triple-heterojunction tunnel transistor. This has added semiconductor junction layers which increased the on-current by as much as 100:1. If successful, rapidly-switching microprocessors will be feasible with even a 0.07V supply, and would consume as little as 1% of the energy of today's technology.
期刊论文(5)
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A comprehensive analysis of Auger generation impacted planar Tunnel FETs
俄歇发电影响平面隧道 FET 的综合分析
DOI:
10.1016/j.sse.2020.107782
发表时间:
2020
期刊:
Solidstate electronics
影响因子:
--
作者:
[Ahmed, S. Z., Truesdell, D. S., Tan, Y., Calhoun, B. H., Ghosh, A. W.]
通讯作者:
Ghosh, A. W.
Role of transverse effective mass in Auger generation impacted planar III-V Tunnel FETs
横向有效质量在俄歇发电中的作用影响平面 III-V 隧道 FET
DOI:
10.1109/drc46940.2019.9046439
发表时间:
2019
期刊:
2019 Device Research Conference (DRC
影响因子:
--
作者:
[Ahmed, Sheikh Z., Tan, Yaohua, Ghosh, Avik W.]
通讯作者:
Ghosh, Avik W.
Minimum-Energy Digital Computing With Steep Subthreshold Swing Tunnel FETs
采用陡亚阈值摆幅隧道 FET 的最低能耗数字计算
DOI:
10.1109/jxcdc.2020.3024798
发表时间:
2020
期刊:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
影响因子:
2.4
作者:
[Truesdell, Daniel S., Ahmed, Sheikh Z., Ghosh, Avik W., Calhoun, Benton H.]
通讯作者:
Calhoun, Benton H.
Modeling tunnel field effect transistors—From interface chemistry to non-idealities to circuit level performance
隧道场效应晶体管建模——从界面化学到非理想性再到电路级性能
DOI:
10.1063/1.5044434
发表时间:
2018
期刊:
Journal of Applied Physics
影响因子:
3.2
作者:
[Ahmed, Sheikh Z., Tan, Yaohua, Truesdell, Daniel S., Calhoun, Benton H., Ghosh, Avik W.]
通讯作者:
Ghosh, Avik W.
Auger effect limited performance in tunnel field effect transistors
俄歇效应限制了隧道场效应晶体管的性能
DOI:
10.1109/e3s.2017.8246156
发表时间:
2017
期刊:
2017 Fifth Berkeley Symposium on Energy Efficient Electronic Systems & Steep Transistors Workshop (E3S
影响因子:
--
作者:
[Ahmed, Sheikh, Tan, Yaohua, Truesdell, Daniel, Ghosh, Avik]
通讯作者:
Ghosh, Avik
CPS: Synergy: Collaborative Research: Towards Dependable Self-Powered Things for the IoT
-
批准号:1646454
-
项目类别:Standard Grant
-
资助金额:$53.3万
-
财政年份:2016
-
负责人:Benton Calhoun
-
依托单位:
CSR: Small: Collaborative Research: A Wireless Batteryless System-on-a-Chip Platform for the Internet of Things
-
批准号:1423113
-
项目类别:Standard Grant
-
资助金额:$26.98万
-
财政年份:2014
-
负责人:Benton Calhoun
-
依托单位:
SHF: Small: Variation "Immune System" for Ultra Low Power Systems-on-Chip
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批准号:1422854
-
项目类别:Standard Grant
-
资助金额:$42.5万
-
财政年份:2014
-
负责人:Benton Calhoun
-
依托单位:
SHF: Small: Energy Efficient Reconfigurable Logic for Ultra Low Power Ubiquitous Computing Systems
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批准号:1116297
-
项目类别:Standard Grant
-
资助金额:$40.0万
-
财政年份:2011
-
负责人:Benton Calhoun
-
依托单位:
国内基金
海外基金
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批准号:
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项目类别:省市级项目
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资助金额:30.0万元
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负责人:黎景卫
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依托单位:
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批准号:22207024
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项目类别:青年科学基金项目(C类)
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资助金额:20.0万元
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负责人:赵琦
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负责人:陈灵丽
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批准号:62120106002
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资助金额:255万元
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负责人:董晓臣
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批准号:22078300
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负责人:李景华
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