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Fabrication of active devices using semiconducting SiC for use in heavy environment

使用半导体 SiC 制造用于恶劣环境的有源器件

基本信息

批准号：
59850051
负责人：
MATSUNAMI Hiroyuki
金额：
$ 5.18万
依托单位：
Kyoto University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Developmental Scientific Research
财政年份：
1984
资助国家：
日本
起止时间：
1984 至 1985
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-59850051/
关键词：
SiC field effect transistor epitaxial growth プラズマエッチング

项目摘要

Fundamental studies on fabrication of active devices have been carried out using semiconducting 3C-SiC for use in heavy environment. The crystal growth conditions were made clear to obtain the flat surface which is strongly required for device fabrication. And, a precise processing of 3C-SiC was developed. Using the above results, simple devices such as MOS, Schottky and pn junctions were prepared. As an active device, MES FET was designed and the electrical characteristics were simulated. Some samples were fabricated. The following results were obtained.(1) Flatness of grown layers: Different orientations ((100),(110),(111)) were examined for the epitaxial growth. Single crystals of 3C-SiC with a large area of 2 inch diameter was obtained. By observing anti-phase domains which cause rough surfaces, a new method to get rid of surface roughness was developed.(2) Precise processing: Plasma etching technology for 3C-SiC was established using <CF_4> and <O_2> gases. The etch rate can be controlled by the content of <O_2> gas. Chromium metal was found to be usable as an etching mask.(3) Preparation of Diodes: Diodes of MOS, Schottky and ph-junction types using 3C-SiC were prepared and the electrical characteristics were measured. Inversion in 3C-SiC MOS diodes under illumination was obtained for the first time.(4) Design and Fabrication of MES FET: Device structures of MES FET using 3CSiC single crystals were designed and the electrical characteristics were simulated. MES FETs were fabricated using Schottky gates on the 3C-SiC layers which were epitaxially grown on high resistive p-type 3C-SiC obtained by doping <B_2> <H_6> . Although Schottky characteristics of the device were enough good, operation of a FET was not obtained due to insufficient ohmic characteristics at source and drain electrodes.

利用半导体的3C-SiC材料制造用于重环境的有源器件的基础研究已经展开。明确了晶体生长条件，以获得器件制造所迫切需要的平面。并开发了一种3C-SiC的精密加工方法。利用上述结果，制备了MOS、Schottky和pn结等简单器件。设计了MES场效应管作为有源器件，并对其电特性进行了仿真。一些样品是捏造的。得到了以下结果：(1)生长层的平整度：不同方向((100),（110),(111)）进行外延生长的检测。得到了直径为2英寸的大面积3C-SiC单晶。通过观察引起表面粗糙的反相畴，提出了一种消除表面粗糙度的新方法。(2)精密加工：采用<CF_4>和<O_2>气体建立了3C-SiC的等离子体刻蚀工艺。腐蚀速率可由<O_2>气体的含量来控制。发现金属铬可用作蚀刻掩膜。(3)二极管的制备：采用3C-SiC制备了MOS、Schottky和ph结型二极管，并测量了其电学特性。首次实现了3C-SiC MOS二极管在光照下的反转。(4) MES FET的设计与制作：设计了基于3CSiC单晶的MES FET器件结构，并对其电学特性进行了仿真。采用肖特基栅在掺杂<B_2> <H_6>得到的高阻p型3C-SiC上外延生长的c - sic层上制备了MES fet。虽然器件的肖特基特性足够好，但由于源极和漏极的欧姆特性不足，无法实现场效应管的工作。