Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices
高纯宽禁带半导体SiC晶体生长及其在功率器件中的应用
基本信息
- 批准号:04555068
- 负责人:
- 金额:$ 11.14万
- 依托单位:
- 依托单位国家:日本
- 项目类别:Grant-in-Aid for Developmental Scientific Research (B)
- 财政年份:1992
- 资助国家:日本
- 起止时间:1992 至 1993
- 项目状态:已结题
- 来源:
- 关键词:
项目摘要
Homoepitaxial growth of high-quality SiC could be achieved at low temperatures of 1100-3333*, by utilizing step-flow growth on off-oriented SiC{0001} substrates. Growth mechanism such as surface diffusion and nucleation was quantitatively analyzed.Conduction control of grown layrs was successfully performed in the range of 10^<15>-10^<20>cm^<-3> through in-situ doping. Thermal oxidation, reactive ion etching (RIE), and ion implantation techniques of SiC were established.A pn junction diode fabricated through successive growth of n- and p-type layrs had a breakdown voltage of 480V.A high breakdown field of 3x10^6V/cm was obtained. Au/SiC Schottky barrier diodes showed excellent characteristics, such as a high blocking voltage over 1.1kV and a low on-resistance of 8x10^<-3>OMEGAcm^2, which is lower than theoretical limits of Si Schottky rectifiers by more than one order of magnitude. The present study demonstrates the great potential of SiC power devices.
在非取向的碳化硅{0001}衬底上采用阶梯流生长方法,可以在1100~3333℃的低温下实现高质量碳化硅的同质外延生长。定量分析了表面扩散和形核等生长机制,通过原位掺杂成功地实现了在10^<;15>;-10^<;20>;cm^<;-3>;范围内生长的导电性控制。建立了碳化硅的热氧化、反应离子刻蚀和离子注入工艺,通过连续生长n型和p型层制备的pn结二极管的击穿电压为480V,击穿电场为3×10~(-6)V/cm。Au/SiC肖特基势垒二极管具有良好的特性,其阻挡电压大于1.1kV,导通电阻为8×10~(-3)>;OMEGAcm^2,比硅肖特基整流器件的理论极限低一个数量级以上。本研究展示了碳化硅功率器件的巨大潜力。
项目成果
期刊论文数量(28)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Kimoto: "High-Voltage(>1kV)SiC Schottky Barrier Diodes with Low On-Resistances" IEEE Electron Device Lett.14. 548-550 (1993)
T.Kimoto:“具有低导通电阻的高压 (>1kV)SiC 肖特基势垒二极管”IEEE Electron Device Lett.14。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
T.Kimoto: "Amorphous and Crystalline Silicon Carbide IV" Springer-Verlag, 31-39 (1992)
T.Kimoto:“非晶和结晶碳化硅 IV”Springer-Verlag,31-39 (1992)
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
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- 通讯作者:
T.Kimoto: "Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center" to be published in Jpn.J.Appl.Phys.32. (1993)
T.Kimoto:“4H-SiC 的步进控制外延生长和 Ga 掺杂作为蓝色发光中心”将发表在 Jpn.J.Appl.Phys.32 上。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
A.Yamashita: "Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates" Jpn.J.Appl.Phys.31. 3655-3661 (1992)
A.Yamashita:“低温下 6H-SiC 在 {011^^-4} 衬底上的同质外延化学气相沉积”Jpn.J.Appl.Phys.31。
- DOI:
- 发表时间:
- 期刊:
- 影响因子:0
- 作者:
- 通讯作者:
H.Matsunami: "Progress in Epitaxial Growth of SiC" physica B. 185. 65-74 (1993)
H.Matsunami:“SiC 外延生长的进展”Physica B. 185. 65-74 (1993)
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- 影响因子:0
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MATSUNAMI Hiroyuki其他文献
MATSUNAMI Hiroyuki的其他文献
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{{ truncateString('MATSUNAMI Hiroyuki', 18)}}的其他基金
Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics
宽带隙半导体电子特性控制及其在能源电子领域的应用
- 批准号:
09102009 - 财政年份:1997
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for Specially Promoted Research
Atomic-Level Control of SiC and Device Applications
SiC 的原子级控制和器件应用
- 批准号:
08044143 - 财政年份:1996
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for international Scientific Research
Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy
激光辐照引起的表面反应的显微分析及其在原子层外延中的应用
- 批准号:
06452111 - 财政年份:1994
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Application of Wide Bandgap Semiconductor SiC for Power Devices
宽禁带半导体SiC在功率器件中的应用
- 批准号:
06555095 - 财政年份:1994
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Electronic Behavior ofWide-Gap Semiconductor and Devices
宽禁带半导体和器件的电子行为
- 批准号:
06044115 - 财政年份:1994
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for international Scientific Research
Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices
步进控制外延高质量SiC晶体生长及其在功率器件中的应用
- 批准号:
02555059 - 财政年份:1990
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research (B)
Carrier dynamics in amorphous semiconductor superstructures
非晶半导体超结构中的载流子动力学
- 批准号:
63460056 - 财政年份:1988
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for General Scientific Research (B)
Development of SiC Blue Light-Emitting Diodes Utilizing Step-Controlled Epitaxy
利用步进控制外延技术开发 SiC 蓝色发光二极管
- 批准号:
63850060 - 财政年份:1988
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
Low Temperature Epitaxial Growth of Refractory Crystals by Photo-ionization
光电离低温外延生长难熔晶体
- 批准号:
59420018 - 财政年份:1984
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for General Scientific Research (A)
Fabrication of active devices using semiconducting SiC for use in heavy environment
使用半导体 SiC 制造用于恶劣环境的有源器件
- 批准号:
59850051 - 财政年份:1984
- 资助金额:
$ 11.14万 - 项目类别:
Grant-in-Aid for Developmental Scientific Research
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