Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices

高纯宽禁带半导体SiC晶体生长及其在功率器件中的应用

基本信息

  • 批准号:
    04555068
  • 负责人:
  • 金额:
    $ 11.14万
  • 依托单位:
  • 依托单位国家:
    日本
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
  • 财政年份:
    1992
  • 资助国家:
    日本
  • 起止时间:
    1992 至 1993
  • 项目状态:
    已结题

项目摘要

Homoepitaxial growth of high-quality SiC could be achieved at low temperatures of 1100-3333*, by utilizing step-flow growth on off-oriented SiC{0001} substrates. Growth mechanism such as surface diffusion and nucleation was quantitatively analyzed.Conduction control of grown layrs was successfully performed in the range of 10^<15>-10^<20>cm^<-3> through in-situ doping. Thermal oxidation, reactive ion etching (RIE), and ion implantation techniques of SiC were established.A pn junction diode fabricated through successive growth of n- and p-type layrs had a breakdown voltage of 480V.A high breakdown field of 3x10^6V/cm was obtained. Au/SiC Schottky barrier diodes showed excellent characteristics, such as a high blocking voltage over 1.1kV and a low on-resistance of 8x10^<-3>OMEGAcm^2, which is lower than theoretical limits of Si Schottky rectifiers by more than one order of magnitude. The present study demonstrates the great potential of SiC power devices.
在非取向的碳化硅{0001}衬底上采用阶梯流生长方法,可以在1100~3333℃的低温下实现高质量碳化硅的同质外延生长。定量分析了表面扩散和形核等生长机制,通过原位掺杂成功地实现了在10^&lt;15&gt;-10^&lt;20&gt;cm^&lt;-3&gt;范围内生长的导电性控制。建立了碳化硅的热氧化、反应离子刻蚀和离子注入工艺,通过连续生长n型和p型层制备的pn结二极管的击穿电压为480V,击穿电场为3×10~(-6)V/cm。Au/SiC肖特基势垒二极管具有良好的特性,其阻挡电压大于1.1kV,导通电阻为8×10~(-3)&gt;OMEGAcm^2,比硅肖特基整流器件的理论极限低一个数量级以上。本研究展示了碳化硅功率器件的巨大潜力。

项目成果

期刊论文数量(28)
专著数量(0)
科研奖励数量(0)
会议论文数量(0)
专利数量(0)
T.Kimoto: "High-Voltage(>1kV)SiC Schottky Barrier Diodes with Low On-Resistances" IEEE Electron Device Lett.14. 548-550 (1993)
T.Kimoto:“具有低导通电阻的高压 (>1kV)SiC 肖特基势垒二极管”IEEE Electron Device Lett.14。
  • DOI:
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    0
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  • 通讯作者:
T.Kimoto: "Amorphous and Crystalline Silicon Carbide IV" Springer-Verlag, 31-39 (1992)
T.Kimoto:“非晶和结晶碳化硅 IV”Springer-Verlag,31-39 (1992)
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    0
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T.Kimoto: "Step-Controlled Epitaxial Growth of 4H-SiC and Doping of Ga as a Blue Luminescent Center" to be published in Jpn.J.Appl.Phys.32. (1993)
T.Kimoto:“4H-SiC 的步进控制外延生长和 Ga 掺杂作为蓝色发光中心”将发表在 Jpn.J.Appl.Phys.32 上。
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  • 发表时间:
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  • 影响因子:
    0
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A.Yamashita: "Homoepitaxial Chemical Vapor Deposition of 6H-SiC at Low Temperatures on {011^^-4} Substrates" Jpn.J.Appl.Phys.31. 3655-3661 (1992)
A.Yamashita:“低温下 6H-SiC 在 {011^^-4} 衬底上的同质外延化学气相沉积”Jpn.J.Appl.Phys.31。
  • DOI:
  • 发表时间:
  • 期刊:
  • 影响因子:
    0
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  • 通讯作者:
H.Matsunami: "Progress in Epitaxial Growth of SiC" physica B. 185. 65-74 (1993)
H.Matsunami:“SiC 外延生长的进展”Physica B. 185. 65-74 (1993)
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MATSUNAMI Hiroyuki其他文献

MATSUNAMI Hiroyuki的其他文献

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{{ truncateString('MATSUNAMI Hiroyuki', 18)}}的其他基金

Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics
宽带隙半导体电子特性控制及其在能源电子领域的应用
  • 批准号:
    09102009
  • 财政年份:
    1997
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for Specially Promoted Research
Atomic-Level Control of SiC and Device Applications
SiC 的原子级控制和器件应用
  • 批准号:
    08044143
  • 财政年份:
    1996
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Microscopic analysis on surface reaction induced by laser irradiation and its application to atomic layr epitaxy
激光辐照引起的表面反应的显微分析及其在原子层外延中的应用
  • 批准号:
    06452111
  • 财政年份:
    1994
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Application of Wide Bandgap Semiconductor SiC for Power Devices
宽禁带半导体SiC在功率器件中的应用
  • 批准号:
    06555095
  • 财政年份:
    1994
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Electronic Behavior ofWide-Gap Semiconductor and Devices
宽禁带半导体和器件的电子行为
  • 批准号:
    06044115
  • 财政年份:
    1994
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for international Scientific Research
Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices
步进控制外延高质量SiC晶体生长及其在功率器件中的应用
  • 批准号:
    02555059
  • 财政年份:
    1990
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research (B)
Carrier dynamics in amorphous semiconductor superstructures
非晶半导体超结构中的载流子动力学
  • 批准号:
    63460056
  • 财政年份:
    1988
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (B)
Development of SiC Blue Light-Emitting Diodes Utilizing Step-Controlled Epitaxy
利用步进控制外延技术开发 SiC 蓝色发光二极管
  • 批准号:
    63850060
  • 财政年份:
    1988
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research
Low Temperature Epitaxial Growth of Refractory Crystals by Photo-ionization
光电离低温外延生长难熔晶体
  • 批准号:
    59420018
  • 财政年份:
    1984
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for General Scientific Research (A)
Fabrication of active devices using semiconducting SiC for use in heavy environment
使用半导体 SiC 制造用于恶劣环境的有源器件
  • 批准号:
    59850051
  • 财政年份:
    1984
  • 资助金额:
    $ 11.14万
  • 项目类别:
    Grant-in-Aid for Developmental Scientific Research

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