Crystal Growth of Widegap Semiconductor SiC with High-Purity and Application to Power Devices

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Homoepitaxial growth of high-quality SiC could be achieved at low temperatures of 1100-3333*, by utilizing step-flow growth on off-oriented SiC{0001} substrates. Growth mechanism such as surface diffusion and nucleation was quantitatively analyzed.Conduction control of grown layrs was successfully performed in the range of 10^<15>-10^<20>cm^<-3> through in-situ doping. Thermal oxidation, reactive ion etching (RIE), and ion implantation techniques of SiC were established.A pn junction diode fabricated through successive growth of n- and p-type layrs had a breakdown voltage of 480V.A high breakdown field of 3x10^6V/cm was obtained. Au/SiC Schottky barrier diodes showed excellent characteristics, such as a high blocking voltage over 1.1kV and a low on-resistance of 8x10^<-3>OMEGAcm^2, which is lower than theoretical limits of Si Schottky rectifiers by more than one order of magnitude. The present study demonstrates the great potential of SiC power devices.