Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices

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Vapor phase epitaxial growth of SiC on off-oriented 6H-SiC substrates (step-controlled epitaxy) has been carried out at low temperatures of 1000-1500ﾟC. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200ﾟC governed by step-flow growth on off-oriented (0001) faces and at 1100ﾟC on (0114)C faces. The growth rate is limited by the supply of Si species. In step-controlled epitaxy, crystal growth is controlled by the diffusion of reactants in a stagnant layer. On the basis of these results, the growth mechanism is discussed in detail.Doping of N and Al during growth have been tried, and the electrical properties have been examined. Schottky barrier diodes fabricated with undoped and N-doped grown layers show excellent characteristics. High breakdown fields of 1-4x10^6V/cm are obtained.