Crystal Growth of High-Quality SiC by Step-Controlled Epitaxy and its Application for Power Devices

步进控制外延高质量SiC晶体生长及其在功率器件中的应用

• 批准号: 02555059
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 11.33万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research (B)
• 财政年份: 1990
• 资助国家: 日本
• 起止时间: 1990 至 1991
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-02555059/
• 关键词: silicon carbide; power device; breakdown field; low-temperature growth; polytype control; step-flow growth; 価電子制御; 低温結晶成長

Vapor phase epitaxial growth of SiC on off-oriented 6H-SiC substrates (step-controlled epitaxy) has been carried out at low temperatures of 1000-1500ﾟC. Homoepitaxial growth of 6H-SiC is achieved at a temperature as low as 1200ﾟC governed by step-flow growth on off-oriented (0001) faces and at 1100ﾟC on (0114)C faces. The growth rate is limited by the supply of Si species. In step-controlled epitaxy, crystal growth is controlled by the diffusion of reactants in a stagnant layer. On the basis of these results, the growth mechanism is discussed in detail.Doping of N and Al during growth have been tried, and the electrical properties have been examined. Schottky barrier diodes fabricated with undoped and N-doped grown layers show excellent characteristics. High breakdown fields of 1-4x10^6V/cm are obtained.

在1000-1500ﾟC的低温下，用气相外延方法在非取向的6H-SiC衬底上进行了碳化硅的气相外延生长(阶梯控制外延)。6H-碳化硅的同质外延生长温度低至1200ﾟC，这是由非取向(0001)面上的台阶流生长和(0114)C面上的1100ﾟC控制的。生长速度受硅种供应的限制。在阶梯控制外延中，晶体的生长是由反应物在停滞层中的扩散控制的。在此基础上，对薄膜的生长机理进行了详细的讨论，对生长过程中的N、Al掺杂进行了尝试，并对其电学性能进行了测试。用未掺杂和N掺杂生长的肖特基势垒二极管显示出优异的特性。获得了1-4×10~(-6)V/cm的高击穿场强。

项目成果

Woo Sik Yoo: "Polytype-Controlled Single Crystal Growth of Silicon Carbide Using 3C->6H Solid-State Phase Transformation" J. Appl. Phys.70. 7124-7131 (1991)

Woo Sik Yoo：“利用 3C->6H 固态相变实现碳化硅的多型控制单晶生长”J. Appl。

Hiroyuki Matsunami: "Recent Progress in Epitaxial Growth of SiC" Proc. 4th Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other IV-IV Materials. I. 1 (1991)

Hiroyuki Matsunami：“SiC 外延生长的最新进展”Proc。

松波 弘之: "3CーSiC基板上のSiCバルク成長とステップ制御エピタキシ-への応用" 電子情報通信学会 電子部品・材料研究会. CPM90ー64. 29-34 (1990)

Hiroyuki Matsunami：“3C-SiC 衬底上的 SiC 块状生长及其在步进控制外延中的应用” IEICE 电子元件和材料研究组 (CPM90-34)。

松波 弘之: "“ステップ制御エピタキシ-によるSiCの単結晶成長"" 応用物理. 59. 1051-1056 (1990)

Hiroyuki Matsunami：““通过步进控制外延生长 SiC””应用物理 59. 1051-1056 (1990)。

T.Ueda: "Crystal Growth of SiC by StepーControlled Epitaxy" J.Cryst.Growth. 104. 695-700 (1990)

T.Ueda：“通过步进控制外延进行 SiC 晶体生长”J.Cryst.Growth 104. 695-700 (1990)