Electronic Behavior ofWide-Gap Semiconductor and Devices

宽禁带半导体和器件的电子行为

• 批准号: 06044115
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 3.07万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for international Scientific Research
• 财政年份: 1994
• 资助国家: 日本
• 起止时间: 1994 至 1995
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-06044115/
• 关键词: silicon carbide; epitaxial growth; photoluminescence; deep level; ion implantation; power device; 不純物ド-ピング; 結晶評価

SiC epilayrs grown by chemical vapor deposition were characterized by Hall effect, admittance spectroscopy , low-temperature photoluminescence, (PL) and deep level transient spectroscopy (DLTS).The background donor concentration of undoped epilayrs could be reduced down to 1*10^<14>cm^<-3> by increasing the C/Si ratio during growth. The nitrogen donor activation energies were estimated as 50meV at hexagonal and 110meV at cubic sites. In low-temperature PL,the nitrogen bound exciton peaks and free exciton peaks were dominant, indicating high-purity of epilayrs. DLTS measurements revealed a low concentration of electron traps (-10^<13>cm^<-3>). This trap can be created by the irradiation of any high-energy particles, and is stable even after high-temperature annealing at 1700ﾟC.From detailed analyzes of photoluminescence and DLTS peaks, this trap may originate from a Si-C divacancy.B and Al ion implantations into n-type SiC epilayrs were investigated. The critical implant dose for amorphization is estimated to be 1*10^<15>cm^<-2> for Al^+ implantation and 5*10^<15>cm^<-2> for B^+ implantation. By Al^+ implantation followed by annealing at 1500ﾟC,p-type epilayrs with a sheet resistance of 22kOMEGA/* could be obtained. B^+ implantation resulted in the formation of highly resistive layrs. This resistive layrs were successfully applied to the edge termination of high-voltage SiC Schottky rectifiers. Using this technique, 1.7kV SiC rectifiers with a very low on-resistance of 5mOMEGAcm^2 were realized.

用霍尔效应、导纳谱、低温光致发光（PL）和深能级瞬态谱（DLTS）对化学气相沉积（CVD）生长的SiC外延层进行了表征<14><-3>.氮供体的活化能估计为50 meV的六方和110 meV的立方网站。在低温光致发光中，氮束缚激子峰和自由激子峰占主导地位，表明外延层的纯度较高。DLTS测量揭示了低浓度的电子陷阱（~ 10 μ <13>cm-3<-3>）。该陷阱可以通过任何高能粒子的辐照产生，并且即使在1700 ℃的高温退火后也是稳定的。从光致发光和DLTS峰的详细分析，该陷阱可能起源于Si-C双空位。非晶化的临界注入剂量对于Al^+注入估计为1*10^<15>cm^3<-2>，对于B^+注入估计为5*10^<15>cm^<-2>3。通过Al^+离子注入和1500 ℃退火，可以得到方块电阻为22 k Ω/* 的p型外延层。B^+注入导致高电阻层的形成。该阻性层已成功应用于高压SiC肖特基整流器的边缘端接。利用这种技术，实现了具有5 mOMEGAcm ^2的极低导通电阻的1.7kV SiC整流器。

项目成果

Hiroyuki Matsunami: "Progress in SiC epitaxy-Present and Future-" Inst.Phys.Conf.Ser.137. 45-50 (1994)

Hiroyuki Matsunami：“SiC 外延的进展 - 现在和未来 -”Inst.Phys.Conf.Ser.137。

H.Matsunami: "Defect Centers in Ion-Implanted 4H Silicon Carbide" Silicon Carbide and Related Materials-1995. (印刷中). (1996)

H.Matsunami：“离子注入 4H 碳化硅的缺陷中心”碳化硅和相关材料 - 1995 年（出版中）。

Hiroyuki Matsunami: "Nucleation and Step Dynamics in SiC Epitaxial Growth" Mat.Res.Soc.Sympo.Proc.339. 369-379 (1994)

Hiroyuki Matsunami：“SiC 外延生长中的成核和阶跃动力学”Mat.Res.Soc.Sympo.Proc.339。

H.Matsunami: "Characterization of High-Quality 4H-SiC Epitaxial Layrs" Silicon Carbide and Related Materials-1995. (in press). (1996)

H.Matsunami：“高质量 4H-SiC 外延层的表征”碳化硅和相关材料 - 1995。

H.Matsunami: "Defect Centers in Ion-Implanted 4H Silicon Carbide" Silicon Carbide and Related Materials-1995. (in press). (1996)

H.Matsunami：“离子注入 4H 碳化硅中的缺陷中心”碳化硅和相关材料 - 1995。