Development of SiC Blue Light-Emitting Diodes Utilizing Step-Controlled Epitaxy

利用步进控制外延技术开发 SiC 蓝色发光二极管

• 批准号: 63850060
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 9.54万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Developmental Scientific Research
• 财政年份: 1988
• 资助国家: 日本
• 起止时间: 1988 至 1989
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-63850060/
• 关键词: silicon carbide; blue LED; doping; photoluminescence; isoelectronic trap; step-flow growth; 広禁制帯幅半導体; 原子ステップ制御エピタキシ-; 価電子制御; 注入効率; シリコンカーバイド; 青色発光ダイオード; 気相エピタキシャル法; 原子ステップ制御

Vapor phase epitaxial (VPE) growth of SiC on 6H-SiC substrates (step-controlled epitaxy) has been carried out at 1500ﾟC. On well-oriented (0001) faces, twin crystalline 3C-SiC was grown, whereas on off-oriented faces, single crystalline 6HSiC was grown with a very smooth surface. The growth mechanism is discussed on the basis of the experimental results.Aluminum as a bright luminescent center and acceptor was doped with trimethyl-aluminum. Doping effects are discussed by the use of photoluminescence spectral change and the results of Hall measurements. N-type doping was also tried, and characterization of grown layers was carried out.Sharp luminescence peaks near the bandgap have been observed in the layers doped with Ti. The luminescence lines are attributed to exciton Recombination bound to Ti isoelectric traps and its phonon replicas.

采用气相外延(阶梯控制外延)方法，在1500ﾟC温度下在6H-SiC衬底上生长出了孪晶的3C-SiC，而在非取向的衬底上生长出了表面光滑的单晶6HSiC。在实验结果的基础上，对其生长机理进行了探讨。利用光致发光光谱变化和霍尔测量结果讨论了掺杂效应。还尝试了N型掺杂，并对生长的薄膜进行了表征，在钛掺杂的薄膜中观察到了禁带附近尖锐的发光峰。这些发光线归因于与钛等电势陷阱及其声子复制品结合的激子复合。

项目成果

T.VEDA: "Crystal Growth of SiC by Step-Controlled Epitaxy" Journal of Crystal Growth. (1989)

T.VEDA：“通过步进控制外延进行 SiC 晶体生长”晶体生长杂志。

Hiroyuki Matsunami: "Photoluminescence Properties of 6H-SiC Grown by Step-Controlled Vapor Phase Epitaxy" Proc. 3rd Int. Conf. on Amorphous and Crystalline Silicon Carbide and Other Group IV-IV Materials. (1990)

Hiroyuki Matsunami：“通过步进控制气相外延生长的 6H-SiC 的光致发光特性”Proc。

松波弘之: "3C-SiC基板上の6H-SiCの成長とステップ制御エピタキシ-" 電気学会電子材料研究会資料. EFM89-11. 11-17 (1989)

Hiroyuki Matsunami：“3C-SiC 衬底上 6H-SiC 的生长和步进控制外延” IEEJ 电子材料研究小组材料。

Tsunenobu Kimoto: "Photoluminescence of Ti Doped 6H-SiC Grown by Vapor Phase Epitaxy" Jpn. J. Appl. Phys.30. L289-L291 (1991)

Tsunenobu Kimoto：“通过气相外延生长的 Ti 掺杂 6H-SiC 的光致发光”Jpn。

Tetsuzo UEDA: Proceedings of the 9th International Conference on Crystal Growth.

Tetsuzo UEDA：第九届国际晶体生长会议论文集。