Development of SiC Blue Light-Emitting Diodes Utilizing Step-Controlled Epitaxy

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Vapor phase epitaxial (VPE) growth of SiC on 6H-SiC substrates (step-controlled epitaxy) has been carried out at 1500ﾟC. On well-oriented (0001) faces, twin crystalline 3C-SiC was grown, whereas on off-oriented faces, single crystalline 6HSiC was grown with a very smooth surface. The growth mechanism is discussed on the basis of the experimental results.Aluminum as a bright luminescent center and acceptor was doped with trimethyl-aluminum. Doping effects are discussed by the use of photoluminescence spectral change and the results of Hall measurements. N-type doping was also tried, and characterization of grown layers was carried out.Sharp luminescence peaks near the bandgap have been observed in the layers doped with Ti. The luminescence lines are attributed to exciton Recombination bound to Ti isoelectric traps and its phonon replicas.