Control of Electronic Properties of Wide Bandgap Semiconductor and Application to Energy Electronics

宽带隙半导体电子特性控制及其在能源电子领域的应用

• 批准号: 09102009
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 163.2万
• 依托单位: KYOTO UNIVERSITY
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Specially Promoted Research
• 财政年份: 1997
• 资助国家: 日本
• 起止时间: 1997 至 2000
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-09102009/
• 关键词: silicon carbide; power device; pn diode; MOSFET; ion implantation; thermal oxidation; エピタキシャル成長; 深い準位; 不純物ド-ピング; フォトルミネセンス

In this research project, high-quality epitaxial growth of wide bandgap SiC, control of its properties and MOS (metal-oxide-semiconductor) interfaces, and applications to high-power devices have been investigated. By using high-purity and high-quality SiC epilayers, conductivity control has been realized in the wide range from 10^<14> to 10^<20>cm^<-3>. Selective impurity doping by ion implantation has been systematically investigated. Low sheet resistances of 105Ω/□ for n-type and 3600Ω/□ for p-type were obtained. Formation of deep pn junction by MeV ion implantation and semi-insulating SiC layers formed by V ion implantation were also investigated.Detailed characterization of MOS capacitors on n- and p-type SiC revealed clear relationship between oxidation condition and MOS interface quality. The inversion channel mobility in SiC MOSFETs may be controlled by the electron trapping and negative charge caused by shallow acceptor-like interface states. The channel mobility has been improved from 5cm^2/Vs up to 96cm^2/Vs by utilizing a novel crystal face of (1120). The channel mobility for SiC (1120) MOSFETs showed a negative temperature coefficient for the first time, which is critical for power MOSFET applications.Various high-voltage SiC devices have been successfully fabricated. Ni/SiC Schottky diodes exhibited a 1630V breakdown voltage together with a low on-resistance of 5mΩcm^2. Epitaxial mesa and implanted planar SiC pin diodes showed very high breakdown voltages of 4200V and 4600V, respectively. The breakdown voltages of SiC pin diodes increased with increasing temperature, indicating avalanche breakdown. Lateral high-voltage (700V) SiC MOSFETs have been also demonstrated.

在本研究计画中，主要探讨宽禁带SiC的高品质磊晶成长、其特性与MOS（metal-oxide-semiconductor）界面的控制，以及在大功率元件上的应用。通过使用高纯度和高质量的SiC外延层，电导率控制已实现在10^<14>到10^<20>cm^的宽范围内<-3>。系统地研究了离子注入选择性杂质掺杂。获得了105Ω/□的n型和3600Ω/□的p型的低薄层电阻。研究了MeV离子注入形成深pn结和V离子注入形成半绝缘SiC层，并对n型和p型SiC上的MOS电容进行了详细的表征，揭示了氧化条件与MOS界面质量之间的关系。SiC MOSFET中的反型沟道迁移率可以由浅受主界面态引起的电子俘获和负电荷控制。采用（1120）晶面，沟道迁移率从5cm^2/Vs提高到96cm^2/Vs。SiC（1120）MOSFET的沟道迁移率首次显示出负温度系数，这对功率MOSFET的应用至关重要。Ni/SiC肖特基二极管具有1630 V的击穿电压和5 m Ω cm ^2的低导通电阻。外延梅萨和注入平面SiC PIN二极管分别表现出非常高的击穿电压4200 V和4600 V。SiC pin二极管的击穿电压随着温度的升高而升高，表现为雪崩击穿。横向高压（700 V）SiC MOSFET也已被证明。

项目成果

H.Matsunami: "Formation of periodic steps with a unit-cell height on 6H-SiC(0001) surface by HCl etching"Applied Physics Letters. 76. 3412-3414 (2000)

H.Matsunami：“通过 HCl 蚀刻在 6H-SiC(0001) 表面上形成具有晶胞高度的周期性台阶”应用物理快报。

H.Matsunami: "Vanadium ion implanted guard rings for high-voltage 4H-SiC Schottky rectifiers"Japanese J.Applled Physics. 39. L1216-L1218 (2000)

H.Matsunami：“用于高压4H-SiC肖特基整流器的钒离子注入保护环”日本J.应用物理。

H.Matsunami: "Implantation of Al and B acceptors into a-SiC and pn junction diodes" Materials Sci.Forum. 264-268. 705-708 (1998)

H.Matsunami：“将 Al 和 B 受体植入 a-SiC 和 pn 结二极管”材料科学论坛。

H. Matsunami: "Specular surface morphology of 4H-SiC epilayers grown on (1120) face"Jpn. J. Appl. Phys.. 38. L1315-L1318 (1999)

H. Matsunami：“在（1120）面上生长的 4H-SiC 外延层的镜面表面形态”Jpn。

H.Matsunami: "Performance limiting surface defects in SiC epitaxial p-n junction diodes" IEEE Trans.Electron Devices. 46. 471-477 (1999)

H.Matsunami：“SiC 外延 p-n 结二极管中的性能限制表面缺陷”IEEE Trans.Electron Devices。