Low Temperature Epitaxial Growth of Refractory Crystals by Photo-ionization

光电离低温外延生长难熔晶体

• 批准号: 59420018
• 负责人: MATSUNAMI Hiroyuki
• 金额: $ 20.22万
• 依托单位: Kyoto University
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for General Scientific Research (A)
• 财政年份: 1984
• 资助国家: 日本
• 起止时间: 1984 至 1985
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-59420018/
• 关键词: refractory crystals; epitaxial growth; 光イオン化

The final purpose of this project is to reduce epitaxial growth temperature of refractory materials utilizing high energy-state ions generated by photoionization with irradiation of vacuum ultra violet light. Fundamental approaches to realize the epitaxial growth at very low temperatures have been carried out, and the following results are obtained.1: Fundamental process of photo-ionization has been revealed in the case of aluminum atom which is an important element for compound and mixed semiconductors. A new type of experimental apparatus to get a high power and wide area light source in the vacuum ultra violet wavelength region was fabricated. The ionization rate of Al atoms increased with the photon intensity. Simple theoretical analyses of the measured dependences of the ionization rate on the Al flux density and the photon intensity revealed that the one-photon ionization process was dominant.Based on the results of photo-ionization process, low temperature epitaxial growth of Si … More has been investigated.2: The number of twins in the epitaxial layer was decreased by the irradiation of vacuum ultra violet light during deposition, which shows that the crystallinity can be improved using excitation of the substrate surface and/or Si atoms with the light.3: Under the extremely high vacuum condition, the surface cleanness of atomic level could be obtained through a relatively low temperature heat treatment around 800-900 <゛゜c> . Poly-crystalline Si was deposited on the surfaces with residual impurities such as Si <O_2> , but single-crystalline Si with a mirror surface could be epitaxially grown on the atomically clean surface at a low temperature of 650 <゛゜c> .The fundamental results of this project as mentioned above show that the refractory crystals can be epitaxially grown at low temperatures utilizing photo-excited states of constituent atoms. The increase of the ionization rate and the control of the ion energy by applying substrate bias must be needed to obtain epitaxial layers of good crystallinity reproducibly. Less

本计画的最终目的是利用真空紫外光照射光致电离产生的高能态离子来降低难熔材料的磊晶成长温度。研究了实现低温外延生长的基本途径，得到以下结果：1.揭示了化合物半导体和混合半导体中重要元素铝原子光电离的基本过程。研制了一种新型的真空紫外波段大功率宽面积光源实验装置。Al原子的电离率随光子强度的增加而增加。对测量的电离率与Al通量密度和光子强度的关系进行了简单的理论分析，发现单光子电离过程占主导地位。 ...更多信息 已被调查2：在沉积过程中，真空紫外光的照射可以减少外延层中孪晶的数量，这表明光对衬底表面和/或Si原子的激发可以提高外延层的结晶度。3：在极高真空条件下，通过800-900 ℃的相对低温热处理可以获得原子级的表面清洁度。在含有Si等杂质的表面上沉积多晶硅<O_2>，而在650 ℃的低温下，在原子级洁净的表面上外延生长出具有镜面的单晶硅。本项目的基本结果表明，利用组成原子的光激发态，可以在低温下外延生长难熔晶体。必须通过施加衬底偏压来增加离子化速率和控制离子能量，以可重复地获得良好结晶度的外延层。少

项目成果

Japanese Journal of Applied Physics. Vol. 25. (1986)

日本应用物理学杂志。

Japanese Journal of Applied Physics. 26. (1986)

日本应用物理学杂志。