Application of Wide Bandgap Semiconductor SiC for Power Devices

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SiC is a promising semiconductor for advanced power device applications owing to its outstanding properties. Thermal oxidation and fabrication of fundamental SiC devices using high-quality epilayrs were investigated.Thermal oxides of SiC have very high resistivity of 5x10^<16>OMEGAcm and break-down field of 9.6MV/cm. The interface state density, which was estimated from the capacitance-voltage characteristics of MOS diodes, was 5x10^<10> cm^<-2>eV^<-1> for n-type SiC and 4x10^<11>cm^<-2>eV^<-1> for p-type SiC.The pn junction diodes formed by N ion implantation and epitaxial growth exhibited high breakdown voltages of 615V and 1720V,respectively. By employing edge termination utilizing B ion implantation, the reverse characteristics of SiC Schottky rectifiers were significantly improved. An excellent SiC Schttky rectifier with a 1750V breakdown voltage and a 5mOMEGAcm^2 on-resistance was realized. Inversion-type n-channel SiC MOSFET showed very good characteristics with a transconductance of 1.0mS/mm.