权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Atomic-Level Control of SiC and Device Applications

SiC 的原子级控制和器件应用

基本信息

批准号：
08044143
负责人：
MATSUNAMI Hiroyuki
金额：
$ 1.34万
依托单位：
KYOTO UNIVERSITY
依托单位国家：
日本
项目类别：
Grant-in-Aid for international Scientific Research
财政年份：
1996
资助国家：
日本
起止时间：
1996 至无数据
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-08044143/
关键词：
Silicon Carbide Widegap semiconductor Epitaxial Growth Mos Transitor Schottky Barrier

项目摘要

Silicon carbide (SiC) is a IV-IV compound semiconductor material with a wide bandgap. The wide bandgaps of SiC give the material very high breakdown field, about ten times higher than that of Si or GaAs. The energies of optical phonons in SiC are as high as 100-120meV,which leads tohigh saturated electron drift velocity (2x10^7 cm/s in 6H-SiC) and high thermal conductivity (4.9W/Kcm). These outstanding properties and controllable p- and n-type doping during crystal growth make SiC a very attractive semiconductor material. Chemical vapor deposition (CVD) of silicon carbide (SiC) on SiC {0001} substrates and device applications have been investigated. Polytype-controlled epitaxial growth of SiC,which utilizes step-flow growth on off-oriented SiC {0001} substrates(step-controlled epitaxy), isproposed, and the detailedgrowth mechanism is discussed. In step-controlled epitaxy, SiC growth is controlled by the diffusion of reactants in a stagnant layr. Critical growth conditions where the growth mode changes from step-flow to two-dimensional nucleation are predicted as a function of growth conditions using a model describing SiC growth on vicinal {0001} substrates. Step bunching on the surfaces of SiC epilayrs, nucleation, and step-dynamics are also investigated. High quality of SiC epilayrs was elucidated through low-temperature photoluminescence, Hall effect, and deep level measurements. Excellent doping controllability in the wide range has been obtained by in-situ doping of a nitrogen donor and aluminum/boron acceptors. Recent progress in SiC device fabrication using step-controlledepitaxial layrs is studied. Intrinsic potential of SiC has been demonstrated in the excellent performance of high-power, high-frequency, and high-temperature SiC devices, which will exploit novel electronics.

碳化硅（SiC）是具有宽带隙的IV-IV族化合物半导体材料。SiC的宽带隙使材料具有非常高的击穿电场，约为Si或GaAs的十倍。SiC中的光学声子能量高达100- 120 meV，这导致了高的饱和电子漂移速度（6 H-SiC中为2 × 10^7cm/s）和高的热导率（4.9W/Kcm）。这些优异的性能和晶体生长过程中可控的p型和n型掺杂使SiC成为一种非常有吸引力的半导体材料。本文研究了在SiC {0001}衬底上化学气相沉积（CVD）碳化硅（SiC）及其器件应用。本文提出了在偏离取向的SiC {0001}衬底上采用阶梯流法生长SiC的多型控制外延生长方法（阶梯控制外延），并详细讨论了其生长机理。在步进控制外延中，SiC的生长是由反应物在停滞层中的扩散控制的。临界生长条件的生长模式的变化，从阶梯流到二维成核的预测作为一个函数的生长条件，使用一个模型描述SiC生长邻{0001}衬底。对SiC外延层表面的台阶聚束、成核和台阶动力学也进行了研究。通过低温光致发光、霍尔效应和深能级测量，阐明了SiC外延层的高质量。通过原位掺杂氮施主和铝/硼受主，在宽范围内获得了优异的掺杂可控性。本文研究了采用台阶控制外延层制备SiC器件的最新进展。SiC的内在潜力已在高功率、高频和高温SiC器件的优异性能中得到证明，这将开发新的电子学。