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HIP Sintering of Diamond-Silicon Carbide Composite and its Application to the Carbide Tools

金刚石-碳化硅复合材料的热等静压烧结及其在硬质合金刀具中的应用

基本信息

批准号：
12555182
负责人：
WADA Takahiro
金额：
$ 7.55万
依托单位：
Ryukoku University
依托单位国家：
日本
项目类别：
Grant-in-Aid for Scientific Research (B)
财政年份：
2000
资助国家：
日本
起止时间：
2000 至 2002
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-12555182/
关键词：
diamond silicon carbide SiC Si sintered composite HIP reaction sintering carbide tool 抗折強度

项目摘要

Diamond and Si mixtures were HIPed under temperatures from 1,300° to 1500° and pressure at 50 Mpa for 30 min. When the temperatures were above 1350℃, the products were hardly sintered compacts. The highest density of 3.3g/cm^3 and the highest bending strength of 750 Mpa were obtained. The photomicrograph of polished surface of the product revealed that it mainly consisted of two kinds of substances. The XRD showed the coexistence of diamond and SiC. No trace of conversion reaction to graphite was seen although the sample was treated under the condition where diamond was thermodynamically metastable.An application of the compact to high pressure anvils was attempted. Cubes of the composites were used as the second stage anvils in Kawai-type high pressure apparatus. Because the diamond/SiC composites are transparent to X-ray, X-ray diffraction patterns of NaCl powder compressed in the high pressure apparatus were successfully recorded through the anvil and thereby generated pressures were determined using the equation of state of NaCl. The anvils were proved to be hard enough for the generation of pressure up to 30 Gpa. The present anvil will be applicable not only to X-ray diffraction experiments but also to radiographic studies under pressure.The result of this study indicates the possibility of the treatment of the diamond in the metastable pressure region and contributes to various materials processings in the thermodynamic metastable region.

在1300 ~ 1500 ℃、50 MPa、30 min条件下对金刚石和硅混合物进行热等静压处理，当温度高于1350℃时，产物几乎不为烧结体。最高密度为3.3g/cm^3，最高抗弯强度为750 MPa。产品抛光表面的显微照片显示其主要由两种物质组成。XRD分析表明金刚石和SiC共存。在金刚石亚稳条件下处理样品，未发现向石墨转化的痕迹。复合材料的立方体用作Kawai型高压装置中的第二阶段砧。由于金刚石/SiC复合材料对X射线是透明的，因此通过压砧成功地记录了在高压装置中压缩的NaCl粉末的X射线衍射图案，从而使用NaCl的状态方程确定产生的压力。砧被证明是足够硬的压力高达30 Gpa的产生。该压砧不仅可用于X射线衍射实验，而且可用于压力下的X射线照相研究，研究结果表明了在亚稳压力区对金刚石进行处理的可能性，并有助于在热力学亚稳区对各种材料进行处理。