Study on Nanometer SOI Device Structure

纳米SOI器件结构研究

• 批准号: 16560305
• 负责人: FUJINAGA Kiyohisa
• 金额: $ 1.54万
• 依托单位: Hokkaido Institute of Technology
• 依托单位国家: 日本
• 项目类别: Grant-in-Aid for Scientific Research (C)
• 财政年份: 2004
• 资助国家: 日本
• 起止时间: 2004 至 2006
• 项目状态: 已结题
• 来源: https://kaken.nii.ac.jp/en/grant/KAKENHI-PROJECT-16560305/
• 关键词: SiGe; SOI; MOSFET; Quantum Well; Buried Channel; Hole Mobility; SIMOX; ダブルチャネル; サブスレッショルド特性; CVD; MOSFET; 電界効果デバイス; 転位密度; 正孔; 移動度

The effective hole mobility of SiGe buried-channel MOSTFT on SOI depends on the SiGe channel structure as well as the crystalline quality. In this work, the two sorts of buried-channel structure that consisted of single quantum well (SQW) and triple quantum wells (TQW) were formed at 550℃ on SIMOX wafers by low-pressure CVD. The growth apparatus was built on the basis of ultra-clean technology. The Ge composition of the alloy was 0.2. The SiGe well width, Lz, was 13 nm for SQW and fixed at 3 nm for TQW. The Si barrier thickness, LB, was 2 and 8 nm for TQW. The MOSFETs with the 5.9 nm gate oxide were fabricated on the layers. The Effective hole mobility, μeff, versus effective electric field, Eeff, for the both device types were obtained at room temperature. The mobility of TQW devices was enhanced nearly by 60 %, compared with that for the SQW devices. The mobility enhancement might be due to the increase of the number of holes trapped in the SiGe quantum wells that had the high hole mobility. The best effective hole mobility was obtained for the triple quantum wells channel device with the 3-nm SiGe well width and 2-nm Si barrier thickness fabricated on 40-nm-thick SOI. It was concluded that the multiple quantum wells channel pMOSFETs on SOI enhanced the effective hole mobility and promoted the device performance.

SOI上SiGe埋沟MOSTFT的有效空穴迁移率取决于SiGe沟道结构和晶体质量。本工作采用低压CVD法在SIMOX衬底上于550℃形成了单量子阱（SQW）和三量子威尔斯（TQW）两种埋沟结构。该生长装置是基于超净技术建造的。合金的Ge组成为0.2。SiGe阱宽度Lz对于SQW为13 nm，对于TQW固定为3 nm。对于TQW，Si势垒厚度LB为2和8 nm。在该层上制作了具有5.9nm栅氧化层的MOSFET。在室温下获得了两种器件类型的有效空穴迁移率μeff与有效电场Eeff的关系。与SQW器件相比，TQW器件的迁移率提高了近60%。迁移率的提高可能是由于具有高空穴迁移率的SiGe量子威尔斯阱中捕获的空穴数量的增加。在40 nm厚的SOI上制作的SiGe阱宽为3 nm、Si势垒厚度为2 nm的三量子威尔斯阱沟道器件获得了最佳的有效空穴迁移率。结果表明，SOI上的多量子威尔斯沟道pMOSFET提高了有效空穴迁移率，改善了器件性能。

项目成果

Electrical Investigation of Si/SiGe layers grown on a nanometer-thick SOI by CVD

通过 CVD 在纳米厚 SOI 上生长的 Si/SiGe 层的电学研究

• 发表时间: 2004
• 期刊: Electrochemical and Solid-State Letters 7
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga
• 通讯作者: K.Fujinaga

Buried - channel field effect transistors of triple SiGe quantum wells on SOI

SOI上三SiGe量子阱埋沟道场效应晶体管

• 发表时间: 2006
• 期刊: SiGe ＆ Ge Materials,Processing,and Devices 13
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga;K.Fujinaga;K.Fujinaga
• 通讯作者: K.Fujinaga

A check system of process machine schedules by mobile agents

移动代理流程机器调度检查系统

• 发表时间: 2004
• 期刊: Proceedings of 5^<th> APIEMS 2004
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga
• 通讯作者: K.Fujinaga

Effective hole mobilities in the buried channel of multiple SiGe quantum wells grown by ultra-clean low-pressure CVD

超净低压CVD生长的多个SiGe量子阱埋入沟道中的有效空穴迁移率

• 发表时间: 2007
• 期刊: Semiconductor Technology PV2007-03
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga
• 通讯作者: K.Fujinaga

Electrical investigation of Si/SiGe layers grown on a nanometer - thick SOI by CVD

通过 CVD 在纳米厚 SOI 上生长的 Si/SiGe 层的电学研究

• 发表时间: 2005
• 期刊: Electrochemical and Solid-State Lett 7
• 作者: T.Tanaka;M.Akazawa;E.Sano;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga;K.Fujinaga
• 通讯作者: K.Fujinaga