Investigation of SiGe/Si hetero interface to provide a device for producing multi-valued signals using light-induced current modulation

研究了一种利用光感生电流调制产生多值信号的装置。该器件结构由用于通过激光照射产生空穴的光接收部分和用于检测空穴电流的p型MOSFET组成。光接收部分由SOI衬底上的SiGe量子威尔斯阱构成。通过计算机模拟得到了Si阻挡层厚度与量子能级之间的关系，并将模拟数据应用于光接收部分结构的设计。利用SOI衬底的埋层氧化硅作为栅氧化层，形成了具有埋层SiGe量子阱沟道的MOSFET。器件特性表明，该器件可用作探测和放大空穴电流的器件。

A device for producing multi-valued signals using light-induced current modulation was investigated. The device structure consisted of a light-receiving part for generating holes by laser irradiation and a p-type MOSFET for detecting hole current. The light-receiving part was made by SiGe quantum wells on SOI substrate. The relationship between Si barrier layer thickness and quantum energy level was obtained by the computer simulation and the simulated data was applied to design the light-receiving part structure. The MOSFET with buried SiGe quantum well channel was formed by using the buried silicon oxide of SOI substrate as the gate oxide. The device characteristics of MOSFET showed that the device was useful as the MOSFET for detecting and amplifying hole current.