Low Power Multivalued Nonvolatile Static Random Access Memory

我提出并计算分析了一种使用ReRAM的多值非易失性SRAM。两个参考电阻和一个可编程电阻连接到标准SRAM单元的存储节点。所提出的9 T3 R MNV-SRAM单元可以存储2位存储器。在存储操作中，可以同时执行再调用操作和是否需要写脉冲的连续判定操作。因此，当使用所提出的方案时，不需要判决操作的持续时间和电路。为了实现稳定的召回操作，为了研究工艺变化容限和编程电阻的准确性，我们模拟了所提出的MNV-SRAM单元的晶体管的宽度、可编程电阻器的电阻电源电压采用180 nm 3.3V CMOS HSPICE器件模型。

I proposed and computationally analyzed a multivalued, nonvolatile SRAM using a ReRAM. Two reference resistors and a programmable resistor are connected to the storage nodes of a standard SRAM cell. The proposed 9T3R MNV-SRAM cell can store 2 bits of memory. In the storing operation, the recall operation and the successive decision operation of whether or not write pulse is required can be performed simultaneously. Therefore, the duration of the decision operation and the circuit are not required when using the proposed scheme. In order to realize a stable recall operation, a certain current (or voltage) is applied to the cell before the power supply is turned on. To investigate the process variation tolerance and the accuracy of programmed resistance, we simulated the effect of variations in the width of the transistor of the proposed MNV-SRAM cell, the resistance of the programmable resistor, and the power supply voltage with 180nm 3.3V CMOS HSPICE device models.