Advanced characterization of GaN and GaN-on-diamond electronic devices

GaN 和金刚石基 GaN 电子器件的高级表征

• 批准号: 2123494
• 金额: --
• 依托单位: University of Bristol
• 依托单位国家: 英国
• 项目类别: Studentship
• 财政年份: 2018
• 资助国家: 英国
• 起止时间: 2018 至 无数据
• 项目状态: 已结题
• 来源: https://gtr.ukri.org/projects?ref=studentship-2123494
• 关键词: Advanced; characterization; GaN; diamond; electronic

GaN electronic devices are transforming the field of communication and radar applications. Traps as well as interfaces play a crucial role for enabling their ultimate performance. In this project we will be studying these properties using room temperature and low temperature techniques, as well as develop models to explain the physical behaviours observed. This will provide critical stepping stones including for the development of new GaN epitaxial structures.

GaN电子器件正在改变通信和雷达应用领域。陷阱以及接口在实现其最终性能方面发挥着至关重要的作用。在这个项目中，我们将使用室温和低温技术研究这些特性，并开发模型来解释观察到的物理行为。这将为开发新的GaN外延结构提供关键的垫脚石。