VLSI Technology for system integration
VLSI Technology for system integration
批准号:
183723-2004
负责人:
Ng, WaiTung
金额:
$2.34万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2008
资助国家:
加拿大
项目状态:
已结题
起止时间:
2008-01-01 至 2009-12-31
中文摘要
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英文摘要
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2022
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负责人:Ng, WaiTung
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依托单位:
Design and manufacturing of liquid-cooled SiC power modules for EV applications
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批准号:570515-2021
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项目类别:Alliance Grants
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资助金额:$18.29万
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财政年份:2021
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负责人:Ng, WaiTung
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依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
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批准号:543852-2019
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项目类别:Collaborative Research and Development Grants
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资助金额:$8.41万
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财政年份:2021
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负责人:Ng, WaiTung
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依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2021
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负责人:Ng, WaiTung
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依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
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批准号:521470-2018
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项目类别:Strategic Projects - Group
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资助金额:$14.72万
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财政年份:2020
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负责人:Ng, WaiTung
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依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
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批准号:543852-2019
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项目类别:Collaborative Research and Development Grants
-
资助金额:$8.41万
-
财政年份:2020
-
负责人:Ng, WaiTung
-
依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2020
-
负责人:Ng, WaiTung
-
依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2019
-
负责人:Ng, WaiTung
-
依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
-
批准号:543852-2019
-
项目类别:Collaborative Research and Development Grants
-
资助金额:$8.41万
-
财政年份:2019
-
负责人:Ng, WaiTung
-
依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
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批准号:521470-2018
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项目类别:Strategic Projects - Group
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资助金额:$14.61万
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财政年份:2019
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2018
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负责人:Ng, WaiTung
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依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules**********
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批准号:521470-2018
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项目类别:Strategic Projects - Group
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资助金额:$13.66万
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财政年份:2018
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2017
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2016
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负责人:Ng, WaiTung
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依托单位:
Simulation of in-circuit operation of OTP memory devices
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批准号:484186-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Solid state circuit breaker investigation
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批准号:485835-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2014
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负责人:Ng, WaiTung
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依托单位:
VLSI power management technology
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批准号:183723-2009
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2013
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负责人:Ng, WaiTung
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依托单位:
Gate drive circuits for GaN power transistors
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批准号:452953-2013
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2013
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负责人:Ng, WaiTung
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依托单位:
国内基金
海外基金
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