MOST - Manufacturing and applications of GaN power semiconductor devices/modules**********
MOST - Manufacturing and applications of GaN power semiconductor devices/modules**********
批准号:
521470-2018
负责人:
Ng, WaiTung
金额:
$13.66万
依托单位:
依托单位国家:
加拿大
项目类别:
Strategic Projects - Group
财政年份:
2018
资助国家:
加拿大
项目状态:
已结题
起止时间:
2018-01-01 至 2019-12-31
中文摘要
点击翻译按钮获取中文摘要
英文摘要
This project is a joint research collaboration with Taiwan's National Nano Device Laboratories (NDL) and Dana Canada Corp. (Dana) on the design and fabrication techniques for liquid cooled Gallium Nitride (GaN) power modules for Hybrid Electric and pure Electric Vehicles (HEVs and EVs).**GaN power devices are an emerging technology that can outperform the current state-of-the-art silicon based power MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) due to their superior material properties. These include higher critical field, higher electron saturation velocity, and higher mobility in the form of a 2-dimensional electron gas (2DEG) channel. A significant breakthrough that makes GaN power technology attractive is the low-cost technique to grow AlGaN/GaN layers on large size silicon substrates. Further cost-reduction is also promised by the potential to manufacture these power devices at established silicon foundries. The primary application for GaN power transistors is in the implementation of compact and high efficiency power converters for HEVs and EVs. While the wide bandgap material has the added ability to operate in high temperature environment, thermal management of the power converters/drive trains remains a critical challenge in the automotive industry.**This project has three major components: the design and fabrication of high performance and reliable GaN power transistors; the design and implementation of integrated circuits (ICs) to provide intelligent interface and driving for the GaN power transistors (and also IGBTs); the development of low-cost manufacturing process for the production of liquid cooled GaN/IGBT power modules (an integral assembly of multiple power transistors, multiple interface/driving ICs, circuit board, and the aluminum cooling plate). This work will enable Dana to produce the critical power electronic parts for the assembly of compact, reliable and high efficiency power converters for the motor drive in HEVs/EVs.******
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项目类别:Collaborative Research and Development Grants
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资助金额:$8.41万
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财政年份:2020
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负责人:Ng, WaiTung
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2020
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负责人:Ng, WaiTung
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依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
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批准号:RGPIN-2019-04462
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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财政年份:2019
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负责人:Ng, WaiTung
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依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
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批准号:543852-2019
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项目类别:Collaborative Research and Development Grants
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资助金额:$8.41万
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财政年份:2019
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负责人:Ng, WaiTung
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依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
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依托单位:
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财政年份:2018
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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财政年份:2015
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依托单位:
Solid state circuit breaker investigation
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批准号:485835-2015
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2015
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负责人:Ng, WaiTung
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依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
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批准号:RGPIN-2014-04556
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项目类别:Discovery Grants Program - Individual
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资助金额:$2.7万
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负责人:Ng, WaiTung
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依托单位:
VLSI power management technology
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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负责人:Ng, WaiTung
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依托单位:
Gate drive circuits for GaN power transistors
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批准号:452953-2013
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项目类别:Engage Grants Program
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资助金额:$1.82万
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财政年份:2013
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负责人:Ng, WaiTung
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依托单位:
VLSI power management technology
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项目类别:Discovery Grants Program - Individual
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资助金额:$3.35万
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负责人:Ng, WaiTung
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依托单位:
海外基金