VLSI power management technology
VLSI power management technology
批准号:
183723-2009
负责人:
Ng, WaiTung
金额:
$3.35万
依托单位:
依托单位国家:
加拿大
项目类别:
Discovery Grants Program - Individual
财政年份:
2013
资助国家:
加拿大
项目状态:
已结题
起止时间:
2013-01-01 至 2014-12-31
中文摘要
现代VLSI芯片在最高性能情况下的功耗可能会导致过热,甚至会造成破坏性的影响。这在便携式多媒体和电信产品中尤其关键,这些产品的外形、冷却和电池寿命都有非常严格的限制。此外,由于固有的CMOS泄漏电流,也消耗了大量不需要的待机功率。电源管理是当前进一步提高VLSI性能和集成密度的最关键的使能技术之一。根据性能需要动态调整电源电压和时钟频率已经研究了10多年。以前的工作大多集中在VLSI芯片级的功耗节省上。高能效的可变输出电源(DC-DC转换器)的设计通常被认为是琐碎的,是事后才想到的。虽然VLSI芯片级的节能效果显著,但系统级的整体节能效果往往比预期的要差。
英文摘要
The power consumed by modern VLSI chips under maximum performance situation could cause over-heat and even become destructive. This is especially critical in portable multimedia and telecommunication products where form factor, cooling and battery life impose very stringent limitations. In addition, a substantial amount of unwanted standby power due to the inherent CMOS leakage current is also consumed. Power management is currently one of the most critical enabling technologies to further increase VLSI performance and integration density. Dynamically scaling of the power supply voltage and clock frequency according to performance needs has been investigated for more than 10 years. Most of the previous work focused only on saving power at the VLSI chip level. The design of the power efficient variable output power supplies (DC-DC Converters) is often assumed to be trivial and as an afterthought. While significant power saving has been reported at the VLSI chip level, the overall power saving at the system level is often worse than expected.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2022
-
负责人:Ng, WaiTung
-
依托单位:
Design and manufacturing of liquid-cooled SiC power modules for EV applications
-
批准号:570515-2021
-
项目类别:Alliance Grants
-
资助金额:$18.29万
-
财政年份:2021
-
负责人:Ng, WaiTung
-
依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
-
批准号:543852-2019
-
项目类别:Collaborative Research and Development Grants
-
资助金额:$8.41万
-
财政年份:2021
-
负责人:Ng, WaiTung
-
依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2021
-
负责人:Ng, WaiTung
-
依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
-
批准号:521470-2018
-
项目类别:Strategic Projects - Group
-
资助金额:$14.72万
-
财政年份:2020
-
负责人:Ng, WaiTung
-
依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
-
批准号:543852-2019
-
项目类别:Collaborative Research and Development Grants
-
资助金额:$8.41万
-
财政年份:2020
-
负责人:Ng, WaiTung
-
依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2020
-
负责人:Ng, WaiTung
-
依托单位:
Wide Bandgap Power Semiconductor Devices for Next Generation Smart Power Electronics
-
批准号:RGPIN-2019-04462
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2019
-
负责人:Ng, WaiTung
-
依托单位:
CMOS Process Sensors and Design Methodology in Advanced Technology Nodes
-
批准号:543852-2019
-
项目类别:Collaborative Research and Development Grants
-
资助金额:$8.41万
-
财政年份:2019
-
负责人:Ng, WaiTung
-
依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules
-
批准号:521470-2018
-
项目类别:Strategic Projects - Group
-
资助金额:$14.61万
-
财政年份:2019
-
负责人:Ng, WaiTung
-
依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
-
批准号:RGPIN-2014-04556
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.7万
-
财政年份:2018
-
负责人:Ng, WaiTung
-
依托单位:
MOST - Manufacturing and applications of GaN power semiconductor devices/modules**********
-
批准号:521470-2018
-
项目类别:Strategic Projects - Group
-
资助金额:$13.66万
-
财政年份:2018
-
负责人:Ng, WaiTung
-
依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
-
批准号:RGPIN-2014-04556
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.7万
-
财政年份:2017
-
负责人:Ng, WaiTung
-
依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
-
批准号:RGPIN-2014-04556
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.7万
-
财政年份:2016
-
负责人:Ng, WaiTung
-
依托单位:
Simulation of in-circuit operation of OTP memory devices
-
批准号:484186-2015
-
项目类别:Engage Grants Program
-
资助金额:$1.82万
-
财政年份:2015
-
负责人:Ng, WaiTung
-
依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
-
批准号:RGPIN-2014-04556
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.7万
-
财政年份:2015
-
负责人:Ng, WaiTung
-
依托单位:
Solid state circuit breaker investigation
-
批准号:485835-2015
-
项目类别:Engage Grants Program
-
资助金额:$1.82万
-
财政年份:2015
-
负责人:Ng, WaiTung
-
依托单位:
Gallium Nitride (GaN) Power Transistors, Gate Driving Techniques and Next Generation Integrated Power Converters
-
批准号:RGPIN-2014-04556
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$2.7万
-
财政年份:2014
-
负责人:Ng, WaiTung
-
依托单位:
Gate drive circuits for GaN power transistors
-
批准号:452953-2013
-
项目类别:Engage Grants Program
-
资助金额:$1.82万
-
财政年份:2013
-
负责人:Ng, WaiTung
-
依托单位:
VLSI power management technology
-
批准号:183723-2009
-
项目类别:Discovery Grants Program - Individual
-
资助金额:$3.35万
-
财政年份:2012
-
负责人:Ng, WaiTung
-
依托单位:
国内基金
海外基金
登录
查看更多内容
基于切平面受限Power图的快速重新网格化方法
-
批准号:62372152
-
项目类别:面上项目
-
资助金额:50万元
-
批准年份:2023
-
负责人:郑利平
-
依托单位:
多约束Power图快速计算算法研究
-
批准号:61972128
-
项目类别:面上项目
-
资助金额:58.0万元
-
批准年份:2019
-
负责人:郑利平
-
依托单位:
复合气体条件下可逆固体氧化物电池“电-气”转换特性研究
-
批准号:51877173
-
项目类别:面上项目
-
资助金额:61.0万元
-
批准年份:2018
-
负责人:周峻
-
依托单位:
网格曲面上质心Power图的快速计算及应用
-
批准号:61772016
-
项目类别:面上项目
-
资助金额:46.0万元
-
批准年份:2017
-
负责人:辛士庆
-
依托单位:
离散最优传输问题,闵可夫斯基问题和蒙奇-安培方程中的变分原理和Power图
-
批准号:11371220
-
项目类别:面上项目
-
资助金额:50.0万元
-
批准年份:2013
-
负责人:史作强
-
依托单位:
几何约束视角下异构群体队形光滑变换控制方法研究
-
批准号:61300118
-
项目类别:青年科学基金项目
-
资助金额:26.0万元
-
批准年份:2013
-
负责人:郑利平
-
依托单位:
云计算环境下数据中心的power capping关键问题研究
-
批准号:61272460
-
项目类别:面上项目
-
资助金额:81.0万元
-
批准年份:2012
-
负责人:齐勇
-
依托单位:
基于信道Time/Power度量指标的TOA测距误差模型及其应用研究
-
批准号:61172049
-
项目类别:面上项目
-
资助金额:60.0万元
-
批准年份:2011
-
负责人:王沁
-
依托单位:
低功耗集成多级放大器的设计研究
-
批准号:60976028
-
项目类别:面上项目
-
资助金额:35.0万元
-
批准年份:2009
-
负责人:彭晓宏
-
依托单位:
离散谱聚合与谱廓受限的传输理论与技术的研究
-
批准号:60972057
-
项目类别:面上项目
-
资助金额:36.0万元
-
批准年份:2009
-
负责人:张朝阳
-
依托单位: