High-density TSV for 3D integration

用于 3D 集成的高密度 TSV

• 批准号: 451188-2013
• 负责人: Charlebois, Serge
• 金额: $ 2.91万
• 依托单位: Université de Sherbrooke
• 依托单位国家: 加拿大
• 项目类别: Collaborative Research and Development Grants
• 财政年份: 2014
• 资助国家: 加拿大
• 起止时间: 2014-01-01 至 2015-12-31
• 项目状态: 已结题
• 来源: https://www.nserc-crsng.gc.ca/ase-oro/Details-Detailles_eng.asp?id=554669
• 关键词: density; TSV; 3D; integration

The microelectronics industry uses 3D integration strategies - the assembly of multiple integrated circuits (IC) on over the others - to maintain the size reduction while increasing the performances and functionalities. In such assembly, the electrical connection between ICs is enabled by vias traversing the silicon substrate and dubbed through-silicon-vias (TSV). While Teledyne-DALSA Semiconductor (Bromont) has identified the technology for the 1st generation of TSV, it is already clear that the density of TSV will need to be greatly increased in the coming years to soothed the needs for the ever increasing pixel counts on imagers (market targeted by TDS).

微电子行业使用3D集成策略-将多个集成电路（IC）组装在其他集成电路上-以保持尺寸减小，同时提高性能和功能。在这种组件中，IC之间的电连接通过穿过硅衬底的通孔和所谓的硅通孔（TSV）来实现。虽然Teledyne-DALSA Semiconductor（Bromont）已经确定了第一代TSV的技术，但很明显，TSV的密度在未来几年将需要大幅增加，以满足成像器不断增加的像素数需求（TDS的目标市场）。