VLSI-ULSI Parameter Computation

本研究主要研究用于预测VLSI-ULSI电路和器件性能和特性的三维建模方法。重点是：(1)片上和片外互连线三维结构中电容和电感的有效计算；(2)MOSFET三维模拟中阈值电压的可行和准确计算。对于片外互连线路的延迟时间的评估，需要进行前面的计算。在对通过MOSFET电路的脉冲传播进行建模时，需要进行后一种计算。该方法是利用无限电网络理论来简化互连线与相邻器件之间的耦合计算。这一理论导致了高效的数值方法，包括区域收缩技术，从而产生了更强大的计算算法。泽曼尼安教授是一位杰出的研究人员，在过去十年中在应用数学和电子网络理论方面都有扎实的成就。他解决集成电路设计难题的方法新颖，有扎实的理论和数学结果作后盾。他很有可能继续一流的研究。对VLSI-ILSI电路电学特性建模的研究方法，是高风险、高回报的一个重要问题。这个问题在设计、工具和测试计划中是一个高度优先的问题。

This research is on three dimensional modeling methods for predicting performance and characteristics of VLSI-ULSI circuits and devices. The focus is on: (1) efficient computations of capacitances and inductances in three dimensional configurations of on-chip and off-chip interconnection lines; and (2) feasible and accurate computations of threshold voltages in three-dimensional simulations of MOSFETs. The former computations are needed for assessment of delay times in off- chip interconnection lines. The latter computations are needed when modeling pulse propagation through MOSFET circuits. The approach is to use infinite electrical network theory to simplify the computation of coupling between interconnection lines and adjacent devices. This theory leads to efficient numerical methods, including domain contraction techniques, which yield more powerful computation algorithms. Professor Zemanian is an outstanding researcher with a solid record of accomplishment over the past decade in both applied mathematics and electrical network theory. His approach to difficult problems in IC design is novel and backed by solid theory and mathematical results. He is very likely to continue first class research. The research approach to the topic of modeling electrical properties in VLSI-ILSI circuits, is high-risk, high-payoff for an important problem. The problem is a high priority within the Design, Tools and Test Program.