Development of a Scanning Electron Microscope Based Microcharacterization Facility

该奖项是对基于扫描电子显微镜的微观表征设备的开发，该设备具有优化的阴极发光和电荷收集能力，用于电子材料研究。将购买一个示范模型扫描电子显微镜以及用于阴极发光和电荷收集研究的部件。目前材料研究的领域包括异质外延半导体的选择性区域生长、大带隙半导体和细颗粒。阴极发光和电荷收集是解决材料均匀性、宽禁带材料发光分析、选择性外延生长中的应力分布和光电子器件退化等问题的基本表征方法。扫描电子显微镜将具有完全的变温能力以及显微镜和光谱模式。所提出的研究实例包括选择区域GaAs/Si、金刚石薄膜、碳化硅薄膜和量子井器件。来自加州大学洛杉矶分校几个系的研究人员和学生将使用这种仪器。

This award is for the development of an SEM-based micro- characterization facility, with optimized cathodoluminesence and charge collection capabilities for electronic materials research. A demonstration model scanning electron microscope and components for cathodoluminesence and charge collection studies will be purchased. Current areas of materials research include selective area growth of heteroepitaxial semiconductors, large bandgap semiconductors, and fine particles. Cathodoluminesence and charge collection are characterization methods essential for addressing issues such as materials uniformity, analysis of luminesence in wide bandgap materials, stress distributions in selective epitaxial growth, and degradation of optoelectronic devices. The SEM will have full variable temperature capability and microscopy and spectroscopy modes. Examples of researchproposed include selective area GaAs/Si, diamond films, SiC films and quantum well devices. Researchers and students from several of the departments at the University ofCalifornia-Los Angeles will make use of this instrument.