Development of a Scanning Electron Microscope Based Microcharacterization Facility

该奖项用于开发基于sem的微表征设备，该设备具有优化的阴极发光和电荷收集能力，用于电子材料的研究。将购买一台示范模型扫描电子显微镜和用于阴极发光和电荷收集研究的组件。目前的材料研究领域包括异质外延半导体、大带隙半导体和细颗粒的选择性面积生长。阴极发光和电荷收集是解决材料均匀性、宽禁带材料发光分析、选择性外延生长中的应力分布和光电子器件退化等问题的关键表征方法。扫描电镜将具有完全可变温度能力和显微镜和光谱模式。提出的研究实例包括选择性面积GaAs/Si，金刚石薄膜，SiC薄膜和量子阱器件。来自加州大学洛杉矶分校几个系的研究人员和学生将使用这台仪器。

This award is for the development of an SEM-based micro- characterization facility, with optimized cathodoluminesence and charge collection capabilities for electronic materials research. A demonstration model scanning electron microscope and components for cathodoluminesence and charge collection studies will be purchased. Current areas of materials research include selective area growth of heteroepitaxial semiconductors, large bandgap semiconductors, and fine particles. Cathodoluminesence and charge collection are characterization methods essential for addressing issues such as materials uniformity, analysis of luminesence in wide bandgap materials, stress distributions in selective epitaxial growth, and degradation of optoelectronic devices. The SEM will have full variable temperature capability and microscopy and spectroscopy modes. Examples of researchproposed include selective area GaAs/Si, diamond films, SiC films and quantum well devices. Researchers and students from several of the departments at the University ofCalifornia-Los Angeles will make use of this instrument.