An InP/InGaAsp Based Thyristor for Optical Amplification and Power Switching Applications

我们提出了一个项目，旨在探索一种基于InP同质结和相关异质结构的超高功率晶闸管。该晶闸管具有更高的电阻率和直接带隙InP同质结，有望在功率处理能力和开关速度方面大大优于商用硅晶闸管。提出了一种基于InP相关异质结构的新型器件，该器件将电光功率开关和激光作用结合在一个器件中。激光作用是通过在晶闸管结构中引入异质结构激光器实现的。这种新器件可以成为广泛应用的基本组成部分，如功率集成电路、超高功率开关、光学放大和通信，因为所提出的器件可以很容易地根据晶闸管的结构进行放大或缩小。拟议中的项目将研究如何在单个设备中最好地利用，利用ETDL和一些工业合作伙伴开发的独特能力来生长渐变的，晶格匹配的InGaAsP薄膜，从而抑制光学性能（激光器）的带不连续优势和电子性能（晶闸管）的劣势。本研究也将有助于建立与异构接口相关的知识库。

We propose a project directed towards exploring an ultra high power thyristor based on InP homojunctions and the related heterostructures. With higher resistivity and direct band gap InP homojunctions the thyristor is expected to greatly out perform those commercial Si thyristors in power handling capability and switching speed. A new device based on InP related heterostructures is proposed which combines both electrical and optical power switching and lasing action into a single device. The lasing action is realized by introducing a heterostructure laser into the thyristor structure. This new device could be a basic building block for a wide range of applications such as power integrated circuits, ultra high power switching, and optical amplification and communications because the proposed device can be easily scaled up or down depending on the structure of the thyristor. The proposed project will investigate how to best utilize, in a single device, the band discontinuity advantage for optical performance (lasers) and to suppress the disadvantage for electronic performance (thyristors) by utilizing the unique capability being developed by ETDL and some industrial partners to grow graded, lattice matched InGaAsP thin films. The proposed research will also contribute to the knowledge base related to heterointerfaces.