Atomic Level Control of Epitaxy

小行星9307852 本研究的目的是在原子水平上理解薄膜的外延晶体生长，并开发新的和更完美的薄膜材料和结构。 这项工作将集中在理解外延生长的基本过程和开发新的，可控的外延方法。 几个互补的增长监测将利用在研究中，反射高能电子衍射和反射质谱将在生长过程中应用，以监测分子束外延过程中的表面的结构和化学演变。 扫描隧道显微镜将在生长中断期间应用，以消除衍射测量解释中的模糊性。 初期的工作将集中在钉扎和无序的步骤中的杂质的作用，对III-V族半导体表面的结构，和应变弛豫的机制。 这项研究还将扩展到一种新的磁性材料氮化铁的生长。 对外延晶体生长进行的基础研究有望改善微电子和微磁学中使用的主要材料的技术。 将开发监测薄膜制造的技术，这些技术足够灵敏，可以监测添加到薄膜中的每个原子层，并用于控制制造过程，以便可以创建新的和更完美的结构。 ***

9307852 Cohen The aim of this research is to understand epitaxial crystal growth of thin films at the atomic level, and to develop new and more perfect thin film materials and structures. The effort will focus on understanding the fundamental processes of epitaxial growth and on developing new, controlled approaches to epitaxy. Several complementary growth monitors will be utilized in the studies; reflection high energy electron diffraction and reflection mass spectroscopy will be applied during growth to monitor the structural and chemical evolution of surfaces during molecular beam epitaxy. Scanning tunneling microscopy will be applied during growth interruptions to eliminate ambiguity in the interpretation of diffraction measurements. Initial work will focus on the role of impurities in the pinning and disordering of steps, on the structure of III- V semiconductor surfaces, and on mechanisms for strain relaxation. The research will also be extended to the growth of iron nitride, a new magnetic material. %%% The fundamental research conducted on epitaxial crystal growth is expected to improve the technology of the primary materials that are used in microelectronics and micromagnetics. Techniques to monitor the fabrication of a thin film that are sensitive enough to monitor each atomic layer as it is added to the film will be developed and used to control the fabrication process so that new and more perfect structures can be created. ***