Ion Beam Deposition of Silicon and Group III Nitrides: Growth Parameters and Isotopic Structuring

9616440拉巴莱离子束沉积将用于薄膜的同位素结构，以探索硅中扩散和界面反应的基本问题。几乎所有以前对硅自扩散的研究都是使用间接的方法来获得实验信息。将研究硅和第三族氮化物中间隙和空位迁移的自扩散机制，并获得同位素工程材料的结构、电学和光学性质。随着离子注入或扩散制造的光纤和光电子器件结构的尺寸公差变得越来越小，这些信息对硅微电子学来说越来越重要。***

9616440 Rabalais Ion Beam Deposition (IBD) will be used for the isotopic structuring of thin films to explore fundamental issues in diffusion and interfacial reactions in silicon. Almost all previous studies of silicon self diffusion have used indirect methods to obtain experimental information. Self-diffusion mechanisms of interstitial and vacancy migration in silicon and group III nitrides will be studied, and the structural, electrical, and optical properties of isotopically engineered materials will be obtained. %%%% This information is of increasingly critical interest to silicon microelectronics as the dimensional tolerances for fiberoptic and optoelectronic device structures fabricated by ion implantation or diffusion get ever smaller. ***