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CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications

CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
职业:开发用于电子设备应用的应变工程 AlGaInN 异质结构
批准号:
0093742
负责人:
Joan Redwing
金额:
$0.0万
依托单位国家:
美国
项目类别:
Continuing Grant
财政年份:
2001
资助国家:
美国
项目状态:
已结题
起止时间:
2001-03-01 至 2007-11-30

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中文摘要
翻译
这个CAREER项目的重点是研究和利用AlGaInN基异质结构中的极化诱导电场,用于应变工程电子器件的开发。这些器件提供了将GaN基电子器件的性能范围进一步扩展到更高频率和功率的潜力。金属有机气相外延(MOVPE)将用于III族氮化物的外延生长。将发展一种原位光学技术来探测异质结构生长过程中薄膜应力和应变的演变和大小。MOVPE生长的替代氮源将作为提高含铟合金质量的潜在途径进行研究。这些技术和工具将用于制造应变工程AlGaN/InGaN/AlGaInN高电子迁移率晶体管结构。生长后的表征(X射线衍射,透射电子显微镜,光致发光,霍尔测量)将结合真实的时间应力测量,研究应力松弛及其对异质结构的微观结构和电气性能的影响。设备制造和测试将与政府和工业设备开发小组合作进行,以提供快速评估和将该技术转移到设备和系统应用中的途径。该项目的教育目标与研究紧密结合。将开发一个虚拟MOVPE实验室,并在课程作业中使用,以提供一种新颖的学习工具,以亲密和互动的方式将材料特性与加工条件联系起来。 其他教育活动包括本科生和研究生课程编制、本科生研究机会以及与年轻妇女的外联活动。
英文摘要
The focus of this CAREER project is to study and exploit polarization-induced electric fields in AlGaInN-based heterostructures for the development of strain-engineered electronic devices. These devices offer the potential to further expand the performance range of GaN-based electronics to higher frequency and power. Metalorganic vapor phase epitaxy (MOVPE) will be used for epitaxial growth of group III-nitrides in this program. An in-situ optical technique will be developed to probe the evolution and magnitude of thin film stress and strain during heterostructure growth. Alternative nitrogen sources for MOVPE growth will be investigated as a potential route to improving the quality of indium-containing alloys. The techniques and tools will be used to fabricate strain-engineered AlGaN/InGaN/AlGaInN high electron mobility transistor structures. Post-growth characterization (x-ray diffraction, transmission electron microscopy, photoluminescence, Hall measurements) will be combined with real time stress measurements to study stress relaxation and its impact on the microstructural and electrical properties of the heterostructures. Device fabrication and testing will be carried out in collaboration with government and industrial device development groups to provide a pathway for rapid evaluation and transfer of this technology into device and systems applications. The educational goals of the project are closely integrated to the research. A virtual MOVPE laboratory will be developed and used in course assignments to provide a novel learning tool that connects material properties with processing conditions in an intimate and interactive fashion. Additional educational activities include undergraduate and graduate curriculum development, undergraduate research opportunities, and outreach to young women.
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  • 批准号:
    --
  • 项目类别:
    --
  • 资助金额:
    40万元
  • 批准年份:
    2020
  • 负责人:
    Vikrant Gupta
  • 依托单位: