Fundamental Studies of Ion Cutting

这项由亚利桑那州立大学(ASU)的T.L.Alford和J.W.Mayer以及加州大学圣地亚哥分校(UCSD)的S.S.Lau合作的项目致力于解决离子诱导硅和其他半导体表面薄分层的基本方面。离子切割工艺使用离子注入气体原子来促进薄表面层的分裂和转移到不同的衬底上。尽管离子切割现象得到了广泛的应用，但人们对这一过程的许多基本方面知之甚少。直到最近，才对切割过程的基本机理和相关的切割深度进行了研究。这个项目试图了解离子切割过程如何以及为什么影响分裂层的性质的基本问题。该方法包括对剥离层性质的剂量、剂量率和实施温度依赖性的研究。除了亚利桑那州立大学/加州大学可持续发展分校的合作外，还与洛斯阿拉莫斯国家实验室离子-固体相互作用和界面工程小组组长M.Nastasi建立了合作关系。历史上处于不利地位的大学、南非西开普省大学的D·亚当斯也将作为访问科学家参加。该项目解决了材料科学中具有重大技术相关性的专题领域中的基础研究问题，并强调研究与教育的整合。该项目预计将在教育和技术方面产生更广泛的影响-通过提供可以垂直堆叠的层半导体，以及提供结合到玻璃基板上的单层单晶硅，实现三维集成。该研究计划由一个文化多元化的团队实施，并积极参与国家实验室，南非西开普大学的D.Adams的参与将有利于UWC的研究计划和活动，并将允许继续为亚利桑那州立大学/UCSD与UWC之间的合作提供研究生支持。研究生和本科生将有机会参与多学科和多元文化的研究和教育环境。*

This collaborative project between T.L. Alford and J.W. Mayer of Arizona State University (ASU) and S.S. Lau of the University of California, San Diego (UCSD) addresses fundamental aspects of ion-induced delamination of thin surface layers from Si and other semiconductors. The ion-cut process uses ion implanted gas atoms to promote splitting and transferring of a thin sur-face layer onto a different substrate. Although the ion-cut phenomenon is widely applied, little is known about many of the fundamental aspects of this process. It was not until very recently that the basic mechanics of the cutting process and the related cut-depth were investigated. This pro-ject seeks understanding of fundamental issues of how and why the ion-cut process affects the properties of the split layers. The approach includes study of the dose, dose rate, and the implan-tation temperature dependence of the exfoliated layer properties. In addition to the ASU/UCSD collaboration, a collaboration with M. Nastasi, team leader of the ion-solid interactions and inter-face engineering group at the Los Alamos National Laboratory is established. D. Adams of the University of the Western Cape, South Africa, UWC, a Historically Disadvantaged University will also be participating as a Visiting Scientist. This project addresses basic research issues in a topical area of materials science with significant technological relevance, and places emphasis on the integration of research and education. This project is expected to have broader impacts in education, and in technology-three dimensional integration by providing layers of semiconductors that can be vertically stacked and also provid-ing single layers of single crystal Si bonded to glass substrates. The research program is carried out by a culturally diversified team and with active involvement with a national laboratory, and involvement of D. Adams of the University of the Western Cape, South Africa will benefit the research programs and activities at UWC and will allow continuation of graduate support for the collaboration between ASU/UCSD and UWC. Graduate and undergraduate students will have opportunities to participate in a multidisciplinary and culturally diverse research and education environment.***