GOALI: Growth of GaSb-Related Materials and Devices by Metalorganic Chemical Vapor Deposition for Advanced Optical Fiber Communication Applications

1.33或1.55米长波长激光器是现代信息技术时代光纤通信系统中最重要和应用最广泛的光电子器件之一。对于光纤通信，与InP晶格匹配的InGaAsP四元III-V半导体材料体系覆盖了光纤中对应的低色散或低衰减的波长范围。因此，使用生长在InP衬底上的InGaAsP有源层，开发了用于低色散或低衰减的光通信应用的激光器并将其商业化。然而，InP基激光器的特性性能普遍不如砷化镓基激光器。特别是对于垂直腔面发射激光器(VCSEL)，由于缺乏良好的晶格匹配的分布布拉格反射器(DBR)材料组合，因此基于LNP的激光器一直存在问题，这些材料应该具有高折射率对比度、低电阻和低热阻。与基于LiNp的垂直腔面发射激光器相比，采用AlAs/GaAsDBR反射镜的垂直腔面发射激光器具有更好的特性。然而，由于兼容多模光纤的光谱范围较短(？~.85 m)，其传输容量等系统性能特性受到带宽的限制。要获得高性能的长波长激光器，理想的实用组合应该是在与成熟的砷化镓激光器技术兼容的长波长范围内发射的~有源层。与替代的InP基系统相比，GaAs系统具有几个重要的优点，包括更大的晶片加工面积、更好的热性能、更高的掺杂浓度、氧化兼容的材料系统和高性能的DBR材料。已经提出并研究了几种可能的方法。利用MOCVD技术进行InAlGaAsSb外延生长的研究是目前国际上日益关注的一个研究课题。实现高质量的外延层和异质结是发展先进半导体器件，特别是VCSEL的重要元素。本文提出的研究将导致X=1.33 PM垂直腔面发射激光器的实际实现，以及对Sb基异质结基本性质的研究和对Ill-Sb量子点的研究。Sb生长和基本特性研究的主要主题的工作直接与第二个关于设备的研究主题的工作相结合，特别是VCSEL-我们已经在与Agilent Technologies的合作者探索这一领域。这项研究将为Ill-Sb材料中二维受限系统的物理学提供新的基本见解。这些话题很有可能在光电子学和电子学中产生广泛的影响。可以开发高速电子产品。

Long-wavelength lasers emitting at ?= 1.33 or 1.55 m are one of the most important and widely used optoelectronic devices for optical fiber communication systems in the present modern information technology era. For optical-fiber communications, the lnGaAsP quaternary III-V semiconductor material system, which is lattice-matched to InP, covers the wavelength range corresponding to low dispersion or low attenuation in optical fibers. Therefore, lasers for optical communication application with low dispersion or low attenuation have been developed and commercialized using an InGaAsP active layer grown on InP substrates. However, InP-based lasers have generally inferior characteristic performance compared to GaAs-based lasers. Especially for vertical-cavity surface-emitting lasers (VCSELs), lnP -based lasers have been problematic due to the lack of good lattice-matched distributed Bragg reflector (DBR) material combinations, which should have high refractive index contrast, low electrical resistance, and low thermal resistance. Compared to lnP-based VCSELs, GaAs-based VCSELs with AlAs/GaAs DBR mirrors have better characteristics. However, the system performance characteristics, such as the transmission capacity, are limited by the bandwidth of compatible multimode fibers, since they have a short-wavelength spectral range (?~O.85 m).To obtain high-performance long-wavelength lasers, the ideal practical combination should be that of an ~active layer" emitting in the long-wavelength range compatible with the well-established GaAs-based laser technologies. The GaAs system offers several important advantages over the alternate InP-based system, including larger area wafer processing, better thermal properties higher doping concentrations, an oxidation-compatible material system, and high-performance DBR materials. Several possible approaches have been proposed and investigated. One of the most promising is explored here.The study of InAlGaAsSb epitaxial growth using MOCVD is a research topic that is of increasing interest throughout the world. The realization of high-quality epitaxial layers and heterojunctions are important elements in the development of advanced semiconductor devices, in particular, VCSELS. The research proposed here will result in the practical realization of X=1.33pm VCSELs as well as for the study of the fundamental properties of Sb-based heterojunctions and in the study of Ill-Sb quantum dots. The work of the primary topic of the study of Sb growth and fundamental properties couples directly to that of a second research topic on devices, specifically, VCSELs-an area that we are already exploring with collaborators at Agilent Technologies. This research will provide new fundamental insight into the physics of two-dimensionally confined systems in Ill-Sb materials. These topics have a strong potential for broad impact in optoelectronics and also in electronics, e.g.. high-speed electronics could be developed.