EAGER: Characterization and Modeling of Nanoscaled Semiconductor Devices

摘要我们提出了一个EAGER项目，以应用一种新的方法来研究高k纳米级半导体MOSFET器件中的低场载流子迁移率。高介电介质中具有库仑散射中心的器件。该概念将允许在具有双端结构的纳米级器件中评估低场载流子输运，而不是制造三端器件结构。我们将使用两种异质绝缘体器件结构：(1)非易失性，电荷陷阱？(2)在高k介电介质中具有固定电荷的金属栅高k纳米mos晶体管。智力上的优点包括研究和教育的整合，通过简单的双端电导和电容测量来探索高k纳米器件的低场载流子传输，从而减轻了制造带有欧姆触点的三端器件的需要。我们将通过改变电荷的符号、大小和位置来表征实验高-高k器件中库仑电荷对载流子输运的影响。在完成的器件结构上，两端测量将与三端测量进行比较。实验和理论研究涉及器件物理、化学、材料科学和纳米尺度的建模。我们计划的更广泛方面将促进纳米电子劳动力的多样性，提供智力技术转让，研究和教育的整合，以及促进与工业经济部门的伙伴关系。我们已经制定了优秀的教育和推广计划，以增加纳米电子学，特别是半导体器件的多样性。这是维持美国在全球经济中的领导地位的重要领域。我们的研究为少数民族学生的推广和与行业的合作提供了一个很好的工具。我们研究的变革性在于一种用简单的双端结构模拟低场输运的新方法，这种结构可以很容易地在实验室中制造，而不需要大量的光刻设备。该概念适用于广泛的新兴纳米器件中载流子输运的研究，并将有助于该技术的快速创新进步

EAGER: Characterization and Modeling of Nanoscaled Semiconductor DevicesMarvin H. WhiteLehigh UniversityAbstractWe propose a EAGER program to apply a new approach to study low-field carrier mobilityin high-K, nanoscaled, semiconductor MOSFET devices ? devices with Coulombscattering centers in the high-K dielectrics. This concept will permit the evaluation of lowfieldcarrier transport in nanoscaled devices with a two-terminal structure rather than thefabrication of a three-terminal device structure. We will use two hetero-insulator devicestructures: (1) a nonvolatile, ?charge-trap?, nanoscaled MANOS semiconductor memorydevice with programmable charge storage and (2) a metal gate, high-K, nanoscaledMOS transistor with fixed charge in the high-K dielectric.The intellectual merit involves the integration of research and education to explore lowfield,carrier transport in high-K nanoscaled devices with a simple two-terminalconductance and capacitance measurement, thereby, alleviating the need to fabricatethree-terminal devices complete with ohmic contacts. We will characterize the influenceof Coulomb charge in experimental high high-K devices on carrier transport by varyingthe sign, magnitude and position of the charge. Two terminal measurements will becompared with three-terminal measurements on completed device structures. Theexperimental and theoretical studies involve device physics, chemistry, materialsscience and modeling at the nanoscale.The broader aspects in our program will advance diversity in the nanoelectronicsworkforce and provide intellectual technology transfer, integration of research andeducation, and promotion of partnerships with the industrial sector of the economy. Wehave developed excellent educational and outreach programs to increase diversity withopportunities in nanoelectronics, especially semiconductor devices ? an important areato maintain US leadership in a global economy. Our research provides an excellentvehicle for minority student outreach and partnerships with industry.The transformative nature of our research lies in a new approach to model low fieldtransport with simple two-terminal structures, which can be easily fabricated in thelaboratory without extensive photolithographic equipment. The concept is applicable tothe study of carrier transport in a broad range of emerging nanoscaled devices and willaid rapid and innovative advances in the technology