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Physical Electronics of Mult-Dielectric Microstructures

Physical Electronics of Mult-Dielectric Microstructures
多介电微结构的物理电子学
批准号:
8818159
负责人:
Marvin White
金额:
$5.86万
依托单位:
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
1989
资助国家:
美国
项目状态:
已结题
起止时间:
1989-02-01 至 1990-12-31

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中文摘要
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英文摘要
The proposed research program is a continuation of studies into the basic charge transport and storage characteristics in multidielectric microstructures. In this proposed program of one year, the PI will examine the electron and hole components of the tunneling current which crosses the Si-SiO2 boundary with a unique 'dual-channel' SONOS microstructure. (polySilicon gate blocking Oxide-Silicon Nitride- tunnel Oxide-Silicon)
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Carrier Transport in Scaled Charge-Trap NVSM and CMOS Devices
  • 批准号:
    1201656
  • 项目类别:
    Continuing Grant
  • 资助金额:
    $32.98万
  • 财政年份:
    2012
  • 负责人:
    Marvin White
  • 依托单位:
Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) Devices
  • 批准号:
    1061936
  • 项目类别:
    Standard Grant
  • 资助金额:
    $4.5万
  • 财政年份:
    2010
  • 负责人:
    Marvin White
  • 依托单位:
EAGER: Characterization and Modeling of Nanoscaled Semiconductor Devices
  • 批准号:
    0946439
  • 项目类别:
    Standard Grant
  • 资助金额:
    $15.0万
  • 财政年份:
    2009
  • 负责人:
    Marvin White
  • 依托单位:
Advanced Nanoscaled Nonvolatile Semiconductor Memory (NVSM) Devices
  • 批准号:
    0801491
  • 项目类别:
    Standard Grant
  • 资助金额:
    $0.0万
  • 财政年份:
    2008
  • 负责人:
    Marvin White
  • 依托单位:
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