"Meeting with MBE Pioneers", a Special Symposium Held at the International Conference on Molecular Beam Epitaxy, Flagstaff Arizona, September 7, 2014.

拟议的项目将支持分子束外延(MBE)先驱参加将于2014年9月7日在亚利桑那州弗拉格斯塔夫的High Country会议中心举行的研讨会。这次特别研讨会将在2014年9月8日至12日举行的分子束外延国际会议之前举行。分子束外延会议自1978年以来一直举行，为报道分子束外延基础和应用研究领域的新发展提供了一个重要的国际论坛。研讨会将通过聚集不同的专家、研究人员和学生小组，促进III-V半导体领先研究的进展。该项目提供了了解分子束外延基础和应用研究的最新发展、新材料的合成、新型异质结构的形成和创新器件的开发的机会。介绍了III-V、II-VI、IV-VI和IV半导体，包括宽带隙材料、纳米线和量子点以及其他各种新型器件。研讨会讨论的半导体技术进步提供了手段，以满足对支持通信和传感应用的具有多功能的更高性能设备的日益增长的需求。研讨会论文将在《晶体生长杂志》上发表，以供进一步传播。

The proposed project will support participation of Molecular Beam Epitaxy (MBE) of pioneers in a Symposium to be held on September 7, 2014 at the High Country Conference Center, Flagstaff, Arizona. This special Symposium will precede the International Conference on Molecular Beam Epitaxy, which will take place from September 8 to 12, 2014. The MBE conference has taken place since 1978 and has provided a prominent international forum for reporting new developments in the areas of fundamental and applied molecular beam epitaxy research.. The Symposium will foster advances in the leading research on III-V semiconductors, by gathering a diverse group of experts, researchers and students. The program provides the opportunity to learn about the latest developments in fundamental and applied MBE research, synthesis of new materials, formation of novel heterostructures, and the development of innovative devices. III-V, II-VI, IV-VI and IV semiconductors are addressed including wide bandgap materials, nanowires and quantum dots and various other novel devices. Technological advances of the semiconductors addressed in the Symposium offer the means to meet the increasing demand for higher performance devices with multiple functionalities, in support of communications and sensing applications. Further dissemination will be provided with a presentation of Symposium papers in the Journal of Crystal Growth.