2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
2019 17th International Summer School on Crystal Growth (ISSCG-17)(Granby, Colorado)
批准号:
1917552
负责人:
Joan Redwing
金额:
$3.0万
依托单位国家:
美国
项目类别:
Standard Grant
财政年份:
2019
资助国家:
美国
项目状态:
已结题
起止时间:
2019-07-01 至 2020-06-30
中文摘要
材料研究部的这一奖项为2019年7月21日至26日在科罗拉多州格朗比的落基山脉雪山牧场基督教青年会举行的第17届国际晶体生长暑期学校(ISSCG-17)提供了支持。 该活动由美国晶体生长协会(AACG)在国际晶体生长组织(IOCG)的赞助下组织和主办。 该学校定于2019年7月28日至8月2日在美国科罗拉多州基斯通举行的第19届晶体生长和外延国际会议(ICCGE-19)前一周举行。 国际会议(ICCGE/ISSCG)代表了晶体生长和外延领域60年的国际合作历史。 暑期学校最后一次在2007年在美国犹他州帕克城举行。该技术计划包括约15个讲座,涵盖了该领域领先研究人员的半导体,氧化物,金属,有机和生物晶体的生长和表征的理论和实验方面。 学校的形式旨在鼓励讲师和与会者之间的互动。 将通过技术和社会活动促进非正式讨论。 YMCA场地有许多户外活动,这将为与会者提供更多的机会,在乡村和风景优美的户外环境中进行互动。该奖项反映了NSF的法定使命,并通过使用基金会的知识价值和更广泛的影响审查标准进行评估,被认为值得支持。
英文摘要
This award from the Division of Materials Research provides support for the 17th International Summer School on Crystal Growth (ISSCG-17) to be held at the YMCA of the Rockies - Snow Mountain Ranch in Granby, CO from July 21-26, 2019. The event is organized and hosted by the American Association for Crystal Growth (AACG) under the auspices of the International Organization for Crystal Growth (IOCG). The school is scheduled the week prior to the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) which will be held in Keystone, CO USA from July 28-August 2, 2019. The international meetings (ICCGE/ISSCG) represent a 60-year history of international cooperation in the field of crystal growth and epitaxy. The summer school was last held in the USA in Park City, UT in 2007. The technical program consists of about 15 lectures covering both theoretical and experimental aspects of growth and characterization of semiconducting, oxide, metallic, organic and biological crystals by leading researchers in the field. The format of the school is designed to encourage interaction between lecturers and attendees. Informal discussions will be facilitated via technical and social events. The YMCA venue has numerous outdoor activities which will provide additional opportunities for attendees to interact in a rustic and scenic outdoor setting.This award reflects NSF's statutory mission and has been deemed worthy of support through evaluation using the Foundation's intellectual merit and broader impacts review criteria.
期刊论文(0)
专著(0)
科研奖励(0)
会议论文
Participant Support for the 23rd American Conference on Crystal Growth and Epitaxy (ACCGE-23); Tucson, Arizona; 13-18 August 2023
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批准号:2333144
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2023
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:2039351
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项目类别:Cooperative Agreement
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资助金额:$2010.0万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
Participation Support for Students to Attend the 22nd American Conference on Crystal Growth and Epitaxy, Virtual, August 2-4, 2021
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批准号:2138270
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项目类别:Standard Grant
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资助金额:$0.7万
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财政年份:2021
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负责人:Joan Redwing
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依托单位:
EAGER Collaborative Research: Fundamentals of Tunneling, Heterojunction-based 2D-Hot Electron Transistors
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批准号:2029729
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项目类别:Standard Grant
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资助金额:$6.54万
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财政年份:2020
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负责人:Joan Redwing
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依托单位:
Graphene Encapsulated Growth of 2D Materials
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批准号:1808900
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项目类别:Standard Grant
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资助金额:$43.0万
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财政年份:2018
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负责人:Joan Redwing
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依托单位:
NSF EFRI-2DARE, DMREF-2D and MIP Grantees Meeting to be held in November 13-15, 2017 in State College, PA
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批准号:1748382
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项目类别:Standard Grant
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资助金额:$4.98万
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财政年份:2017
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负责人:Joan Redwing
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依托单位:
MIP: 2D Crystal Consortium (MIP-2DCC)
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批准号:1539916
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项目类别:Cooperative Agreement
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资助金额:$1778.76万
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财政年份:2016
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负责人:Joan Redwing
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依托单位:
PFI:AIR - TT: One-Step Process for High Efficiency Textured Solar Cells
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批准号:1414236
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项目类别:Standard Grant
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资助金额:$20.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
GOALI: Strained Layer Heterostructures for GaN-on-Si Epitaxy
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批准号:1410765
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项目类别:Standard Grant
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资助金额:$39.0万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
EFRI 2-DARE: 2D Crystals formed by Activated Atomic Layer Deposition
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批准号:1433378
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项目类别:Standard Grant
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资助金额:$196.45万
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财政年份:2014
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负责人:Joan Redwing
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依托单位:
Film Stress and Morphology Evolution during MOCVD Growth of InGaN
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批准号:1006763
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项目类别:Continuing Grant
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资助金额:$38.8万
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财政年份:2010
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负责人:Joan Redwing
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依托单位:
Stress Evolution during Group III-Nitride Heteroepitaxy
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批准号:0606451
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项目类别:Standard Grant
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资助金额:$38.14万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowire Electronics
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批准号:0609282
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项目类别:Standard Grant
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资助金额:$100.0万
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财政年份:2006
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负责人:Joan Redwing
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依托单位:
NIRT: Semiconductor Nanowires: Building Blocks for Nanoscale Electronics
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批准号:0103068
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项目类别:Continuing Grant
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资助金额:$145.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
CAREER: Development of Strain-Engineered AlGalnN Heterostructures for Electronic Device Applications
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批准号:0093742
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项目类别:Continuing Grant
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资助金额:$0.0万
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财政年份:2001
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负责人:Joan Redwing
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依托单位:
Acquisition of an MOVPE System for Electronic Materials Research and Education
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批准号:0076312
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项目类别:Standard Grant
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资助金额:$15.0万
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财政年份:2000
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负责人:Joan Redwing
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依托单位:
SBIR PHASE I: SiC on Insulator for High Frequency Devices
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批准号:9561370
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项目类别:Standard Grant
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资助金额:$7.5万
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财政年份:1996
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负责人:Joan Redwing
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依托单位:
海外基金