Development of Giant Plasma Processing Based on Large-Area Microwave Discharge

(1)2.45 GHz的1米长高密度等离子体的产生为了避免巨大的大气力作用在介质板上，我们开发了一种新的真空波导系统，为了使等离子体密度均匀，我们还开发了一种多缝隙天线系统。结果，均匀地产生了一米长的高密度等离子体。还产生了2cm厚和1米长的片状等离子体。此外，长时间的高密度等离子体在从1 Pa到大气压的宽压力范围内维持。(2)在915 MHz的放电频率下产生2米长的高密度等离子体与产业技术综合研究所光电技术研究中心合作，在915 MHz的放电频率下成功地产生了2米长的大面积高密度等离子体。此外，利用SiH_4和H_2放电沉积了面积为2 m × 0.2 m的非晶和微晶Si薄膜。(3)平行波产生大面积等离子体 ...更多信息 为了使等离子体宽度更宽，设计了两套多缝隙天线系统，为单台微波发生器研制了独特的功分器。以这种方式，在915 MHz下构建了面积为1 m x 1 m的大型等离子体装置。(4)材料加工中的等离子体控制为了减少高能电子，对微波放电进行了脉冲处理，测量了光发射强度和等离子体密度随时间的变化。另一方面，引入了一个带有孔的介质板，在孔中观察到局部强的光发射，同时下游等离子体中的高能电子减少。(5)利用微波高密度等离子体技术，可以实现高速率（> 10 nm/s）的微晶硅薄膜沉积和大晶粒（≤ 600 nm）的多晶硅薄膜生长。此外，硅表面的氧化和氮化在低温下进行了演示。少

(1) Production of one-meter long high-density plasma at 2.45 GHzWe developed a new vacuum waveguide system in order to avoid huge atmospheric force acting on a dielectric plate, and also a multi-slot antenna system in order to make a plasma density uniform. As a result, a high-density plasma of one meter in length was produced uniformly. A sheet-like plasma of 2 cm in thickness and one meter in length was also produced. Moreover, The long high-density plasma was sustained in a wide range pf pressure from 1 Pa to atmospheric pressure.(2) Production of two-meter long high-density plasma at 915 MHzA large-area high-density plasma of two meter in length was successfully produced at 915 MHz discharge in collaboration with Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology. In addition, amorphous and micro-crystalline Si thin films of 2 m x 0.2 m in area were deposited using SiH_4 and H_2 discharge.(3) Large-area plasma produced by parallel wa … More veguide excitationIn order to make a plasma width wider, two sets of multi-slot antenna system were designed, developing a unique power divider for single microwave generator. In this way, a large plasma device of 1 m x 1 m in area was constructed at 915 MHz.(4) Plasma control for materials processingIn order to reduce high-energy electrons, the microwave discharge was pulsed and the time variation of optical emission intensity and plasma density were measured. On the other hand, a dielectric plate with holes is introduced where a local intense optical emission was observed in the hole with a decrease in high-energy electrons in the down stream plasma.(5) High speed deposition of Si films with oxidation and nitridation of Si at low temperaturesMicrowave high density plasmas enabled micro-crystalline Si film deposition at high rate (> 10 nm/s) and formation of poly-Si film of large grain size (〜600 nm). Furthermore, oxidation and nitridation of silicon surface at low temperatures were demonstrated. Less