Materials for new semiconductor lasers; atomically-controlled, growth of rare-earth-doped III-V semiconductors with high quality

稀土(RE)掺杂半导体作为一种很有前途的新型材料，通过电子注入将电子-空穴对的能量传递到RE壳层，从而实现了从RE4f壳层发光的目的。稀土离子的4f壳层内跃迁产生了尖锐的发射线，其波长很大程度上与基质材料和温度无关。这种稳定性的出现是因为填充的外层5s和5p电子壳层。由于与主体的相互作用，4f电子壳层内部的屏蔽层发生跃迁。Er~(2+)~(3+)和Gt~(3+)离子在1.5μm附近从第一激发态(13/2)跃迁到基态(15/2)的4f壳层内跃迁具有特殊的意义，因为其波长与用于光通信的石英光纤的最小损耗区域相匹配。结果OBT…更多的实验总结如下：1)通过优化反应器结构和生长温度，成功地获得了由不同V族元素组成的异质界面成分的突变。2)Er-20组态是由Er和O选择性地掺入到GaAs中，导致发光强度增加了两个数量级：生长环境中O的含量对发光强度的提高起着重要的作用。3)在GaInP/GaAs：Er，O/GaAs双异质结中观察到了Er，O/GaAs双异质结的发光。Er-20谱线是Er-20谱线的主要成分，表明Er-20中心的成功形成和电流注入对Er-20中心的优先激发。4)电流注入对Er离子强度的依赖关系揭示了极大的Er离子在电流注入下的激发截面，约为10^&lt；-15；cm^2。时间分辨测量证实了该大的激发截面。艾尔强度。它比掺Er的硅LED(6x10^-17；cm^2)大两个数量级。较少

Rare-earth (RE) doped semiconductors have gained significant attention as a promising new class of materials that emit light from the RE 4f shell by means of electrical injection, in which the energy of electron-hole pairs is transferred to the RE shell. The intra-4f shell transitions of RE ions give rise to sharp emission lines whose wavelengths are largely independent of both the host materials and temperature. This stability occurs because the filled outer 5s and 5p electron shells. screen transitions within the inner 4f electron shell from the interaction with the host. The intra-4f shell transitions from the first excited state (4^I_<13/2>) to the ground state (4^I_<15/2>) of Er^<3+> ions at around 1.5 μm is of special interest because the wavelength matches the minimum loss region of silica fibers used in optical communications.In this research project, we investigated atomically-controlled growth of Er-doped GaAs with high quality for new-type light-emitting devices. Results obt … More ained experimentally are summarized as follows1)By optimizing reactor structure and growth temperature, the abrupt change in composition at the heterointerface consisting of different group-V elements was successfully obtained.2)Er-20 configuration was selectively formed by codoping Er and O to GaAs, resulting in the increase in PL intensity by two orders in magnitude: The amount of O in growth ambient played an important role for the intensity increase.3)Er-related luminescence was observed in GaInP/GaAs : Er, O/GaAs doubleheterostructures by injecting, current at room temperature. The EL spectrum was dominated by Er-20 lines, suggesting a successful formation of the Er-20 center and a preferential excitation of the center by current injection.4)The current density dependence of the EL intensity revealed an extremely large excitation cross section of Er ions by current injection, approximately 10^<-15> cm^2. The large excitation cross section was confirmed by time-resolved measurements. of the EL intensity. It is by two orders in magnitude larger than that of Er-doped Si LEDs (6x10^<-17> cm^2). Less