Growth of Ferromagnetic Silicide for Source/Drain Engineering

自旋电子（自旋电子）技术有望突破CMOS的缩放限制。特别是，需要与传统Si-LSI兼容的第四族半导体自旋电子学。为此，我们研究了在SiGe上高质量地形成铁磁性硅化物（Fe_3Si），以实现自旋晶体管的源漏（S/D）工程。因此，我们开发了一种在SiGe上自动控制Fe_3Si外延生长的技术，并演示了在Si中的电自旋注入和检测。

The spin-based electronic (spintronic) technologies are promising to break through the scaling limits of the CMOS. In particular, group-IV semiconductor spintronics, compatible with the conventional Si-LSI, is desired. In line with this, we have investigated high-quality formation of the ferromagnetic silicide (Fe_3Si) on SiGe to realize source-drain (S/D) engineering of spin-transistors. Consequently, we have developed a technique for the atomically-controlled epitaxial growth of Fe_3Si on SiGe and demonstrated the electrical spin injection and detection in Si.