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New Method for Room Temperature Bonding at Ambient Gas

New Method for Room Temperature Bonding at Ambient Gas
环境气体下室温键合的新方法
批准号:
23246125
负责人:
SUGA Tadatomo
金额:
$30.45万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (A)
财政年份:
2011
资助国家:
日本
项目状态:
已结题
起止时间:
2011-04-01 至 2014-03-31

项目摘要

项目成果

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中文摘要
翻译
本研究的目的是建立一种在环境气体中进行室温键合的方法,为利用日本先进的表面活化键合方法实现器件的工业化和批量生产提供一种新的途径,为此,系统地积累和整理了键合及其机理的基础知识。在此基础上,提出了Ar离子轰击、Si纳米粘附层、原子扩散连接、空气等离子体处理、氢辐射处理以及它们的组合等新工艺,验证了室温连接方法的可行性。在研究过程中,还完成了一项新的发现,表明使用Si-Fe纳米粘附层粘合聚合物,玻璃和SiC的可能性,这在最初的研究提案中没有计划。最后,它已被证明,所提出的工艺可以成功地应用于集成光学微系统和密封微器件。
英文摘要
This research aims to establish a method for room temperature bonding in ambient gas as a new approach to industrial and volume production for devices using the surface activated bonding method which has been developed in advance in Japan.For thie purpose, the fundamental knowledge for bonding and it mechanism was accumulated and compiled systematically. Based on those research results, new processes including Ar-ion bombardment, Si-nano adhesion layer, atom diffusion bonding, air-plasma treatment, hydrogen radiacal treatment, and their combined process were proposed to demostrate the feasibility of the method for room temperature bonding. During the research also a new finding was done that shows the possibility of bonding polymers, glasses, and SiC using Si-Fe nano-adhesion layer, which was not planned in the original research proposal. Finally it has been shown that the proposed process can be applied successfully to integrating optical microsystems and sealing micro-devices.
期刊论文(70)
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会议论文
Low temperature bonding for 3D integration―A review of the surface activated bonding (SAB)
用于 3D 集成的低温键合——表面活化键合 (SAB) 综述
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Suga, Tadatomo]
通讯作者: Tadatomo
Direct Bonding of Polymer to Glass Wafers using Surface Activated Bonding (SAB) Method at Room Temperature
室温下使用表面活化键合 (SAB) 方法将聚合物直接键合到玻璃晶圆上
DOI: --
发表时间: 2012
期刊:
影响因子: --
作者: [Tadatomo Suga, Takashi Matsumae, Yoshiie Matsumoto and Masashi Nakano.]
通讯作者: Yoshiie Matsumoto and Masashi Nakano.
Room temperature SiO2 wafer bonding by adhesion layer method
通过粘合层法进行室温 SiO2 晶圆键合
DOI: --
发表时间: 2011
期刊:
影响因子: --
作者: [Ryuichi Kondou, Tadatomo Suga]
通讯作者: Tadatomo Suga
高機能光マイクロシステム・センサを実現する低温接合技術
实现高性能光学微系统和传感器的低温接合技术
DOI: --
发表时间: 2014
期刊: 電子情報通信学会2014年総合大会講演論文集
影响因子: --
作者: [A. Yamamoto, S. Sugino, J. Shimoyama, K. Kishio, A. Ishihara, T. Akasaka, M. Tomita, 日暮栄治]
通讯作者: 日暮栄治
共 59 条
    Wafer-scale MEMS Package by means of room temperature bonding
    • 批准号:
      16201028
    • 项目类别:
      Grant-in-Aid for Scientific Research (A)
    • 资助金额:
      $32.28万
    • 财政年份:
      2004
    • 负责人:
      SUGA Tadatomo
    • 依托单位:
    reversible interconnection
    • 批准号:
      07455285
    • 项目类别:
      Grant-in-Aid for Scientific Research (B)
    • 资助金额:
      $4.35万
    • 财政年份:
      1995
    • 负责人:
      SUGA Tadatomo
    • 依托单位:
    Atomic and Electronic Design ob Ceramic/Metal Interfaces
    • 批准号:
      06044059
    • 项目类别:
      Grant-in-Aid for international Scientific Research
    • 资助金额:
      $2.37万
    • 财政年份:
      1994
    • 负责人:
      SUGA Tadatomo
    • 依托单位:
    Study for low temperature bonding and itsapplication for piezo-electric materials.
    • 批准号:
      05452289
    • 项目类别:
      Grant-in-Aid for General Scientific Research (B)
    • 资助金额:
      $2.62万
    • 财政年份:
      1993
    • 负责人:
      SUGA Tadatomo
    • 依托单位:
    海外基金