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Simulation of Thermal CVD Reactor

Simulation of Thermal CVD Reactor
热CVD反应器模拟
批准号:
01303009
负责人:
KATO Kunio
金额:
$4.74万
依托单位:
依托单位国家:
日本
项目类别:
Grant-in-Aid for Co-operative Research (A)
财政年份:
1989
资助国家:
日本
项目状态:
已结题
起止时间:
1989 至 1990

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项目成果

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中文摘要
翻译
化学气相沉积反应器的模拟有必要获得反应动力学和反应器内输运现象的信息。Komiyama等人提出了宏/微腔法来分析CVD的成膜特性,并利用该方法对硅烷形成多晶硅膜进行了研究。Hashimoto等人研究了单硅烷分解制多晶硅的反应动力学,发现需要考虑硅烷浓度的径向分布,才能对反应行为进行精确分析。Kato等人研究了垂直多组分CVD反应器和圆盘式CVD反应器中的传质和流体流动模型。阐明了影响CVD反应器中晶片表面局部传质的因素,提出了垂直多组分CVD反应器中沉积速率分布的分析模型。Imaishi利用Komiya和Shimogaki获得的动力学数据,研究了在多组分CVD反应器中沉积多晶硅膜的模拟。对热壁管式CVD反应器和卧式CVD反应器内的传热传质现象和成膜速率分布进行了数值分析。Hozawa等人对高频感应加热CVD反应器中的温度分布进行了数值分析。通过对电抗器的电磁场和温度场的分析,探讨了线圈、电纳位置和频率对电抗器温度分布的影响。Nakayama等人用有限元方法分析了管式反应器内的非定常流动,定量地确定了气速和气体浓度的分布。
英文摘要
It is necessary for the simulation of CVD reactor to get the informations on the reaction kinetics and the transport phenomena in the reactor.Komiyama et al. have proposed Macro/Micro Cavity method to analyze the film formation characteristics by CVD and investigated on the formation of poly-Si film from silane by this method. Hashimoto et al. have studied the reaction kinetics on the production of polycrystalline Silicon by the decomposition of mono-silane and found that it was needed for the precise analysis of the reaction behavior to consider the radial distribution of silane concentration.Kato et al. have investigated the mass transfer and fluid flow models in a vertical multicomponent CVD reactor and the disk-type CVD reactor. The factors affecting the local mass transfer at the surface of wafer in the CVD reactor were clarified, and the model to analyze the distribution of the deposit rate in the vertical multicomponent CVD reactor was proposed. Imaishi has studied the simulation of the deposition of polysilicon film in a multicomponent CVD reactor by using the kinetic data obtained by Komiya and Shimogaki. The heat and mass transfer phenomena and the distribution of the film formation rate in the hot wall tubular CVD reactor and the horizontal thermal CVD reactor were analyzed numerically. Hozawa et al. have analyzed numerically the temperature distribution in the high-frequency induction heating CVD reactor. The effects of coil the positions of and susceptor and the frequency on the temperature distribution in the reactor were examined by analyzing both the electromagnetic field and temperature field. Nakayama et al. have analyzed the unsteady state flow in the tubular reactor by a finite element method and determined the distributions of gas velocity and gas concentration quantitatively.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
橋本 健治,三浦 孝一 増田 隆夫,当麻 正明 沢井 宏之,河瀬 元明: "棒状基板型CVD反応器におけるシランからの多結晶シリコン製造反応の速度解析" 化学工学論文集. 16. 438-446 (1990)
Kenji Hashimoto、Koichi Miura、Takao Masuda、Masaaki Toma、Hiroyuki Sawai、Motoaki Kawase:“棒状基底型 CVD 反应器中硅烷生产多晶硅反应的动力学分析”化学工程杂志 16. 438-446(1990 年)。 )
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通讯作者:
K. Hashimoto, K. Miura, T. Masuda, M. Toma, H. Sawai and M. Kawase: "Growth Kinetics of Polycrystalline Silicon from Silane by Thermal Chemical Vapor Deposition Method" J. Electrochem. Soc. 137, 3. 1000-1007 (1990)
K. Hashimoto、K. Miura、T. Masuda、M. Toma、H. Sawai 和 M. Kawase:“通过热化学气相沉积法从硅烷中生长多晶硅的动力学”J. Electrochem。
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通讯作者:
佐藤 恒之,湯浅 兵則,今石 宣之: "水平型熱CVD装置内における流動ならびに物質移動" 化学工学論文集. (1991)
Tsuneyuki Sato、Heinori Yuasa、Nobuyuki Imaishi:“卧式热 CVD 设备中的流动和传质”《化学工程杂志》(1991 年)。
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通讯作者:
K. Hashimoto, K. Miura, T. Masuda, M. Toma, H. Sawai and M. Kawase: "Kinetic Analysis of Polycrystalline Silicon Growth from Silane Using a Rod-Substrate CVD Reactor" Kagaku Kogaku Ronbunsyu. 16, 3. 438-446 (1990)
K. Hashimoto、K. Miura、T. Masuda、M. Toma、H. Sawai 和 M. Kawase:“使用棒基 CVD 反应器对硅烷生长多晶硅的动力学分析” Kagaku Kogaku Ronbunsyu。
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