Study of semiconductor/metal interfaces by coherent nano-beam electron diffraction.

半导体电路中集成电路的最新发展应该会使它们与引线有所不同。电路中的所有部件，包括接线，都会影响电路的均衡性能。在这种情况下，作为电子的入口和出口的金属/半导体接触的原子级特征变得至关重要，同时也是硅和砷化镓的最重要的内部结构。在本研究项目中，为了在原子水平上分析半导体/金属半导体超晶格的界面结构，采用相干电子束电子衍射法，研究结果如下：(1)将相干CBED方法平面化地应用于PbTe/MgO双层结构。根据正干涉条纹，我们定量地确定了刚体位移。研究结果发表在《界面科学》第4期(1997)181期。(2)研究了He相干纳米电子衍射图的形成过程，并编制了多层模拟程序。(3)我们用先进的高分辨电子显微镜对Ge/Si界面进行了横截面观察，并借助各种图像处理方法重建了界面周围的原子排列。研究结果被提交给电子显微镜杂志(1998)。

Recent development of integration in semiconductor circuits should make the difference between themselves and lead wires. All of the parts in the circuits including the connection affect equ performance of the circuits. Under these kinds of situations, the atomic level characteriz metal/semiconductor contacts as the entrance and exit of electrons becomes crucial as well as the est of the internal structures of silicon and gallium-arsenide. In the present research project, coherer beam electron diffraction was applied in order to analyze at an atomic level the interface struc semiconductor/metal semiconductor superlattices.Research results are as lollows :(1) Coherent CBED method was applied to PbTe/MgO bi-layrs in a plan-view mode. form the positi interference fringes we determined the rigid-body shift quantitatively. The result was published in J.Interface Science, 4(1997) 181.(2) We investigated the formation process of he coherent nano-electron diffraction pattern and made t multi-slice simulation program. The result was reported on J.Electron Microscopy 46(1997)33.(3) We observed the interface of Ge/Si by using the advanced HREM in a cross-sectional mode, and reconstructed atomic arrangement around the interfaces with help of various types of image proces methods. The result was submitted to J.Electron Microscopy (1998).