Development of Blue-Violet GaN Microcavity Surface-Emitting Lasers far Next-Generation Optical Memory Systems

我们已经开发了电流注入gan基蓝紫色垂直腔面发射激光器的基本技术。高反射率n型AlGaN/GaN分布式Bragg反射器的实现利用金属有机化学气相沉积技术成功制备了高反射率n型AlGaN/GaN分布式Bragg反射器。在DBR生长条件下，载气流速是提高样品均匀性的重要参数之一。凭借这种均匀性，以及对生长温度的精确控制，我们获得了非常高质量的导电dbr，最大反射率超过99% 2。适用于氮化半导体表面发射器件阵列的器件制造工艺的发展我们已经开发出具有良好粘合性能和凹边轮廓的双层光刻胶技术。利用这种技术，我们可以在基于gan的VCSEL阵列制造中获得更好的生产率。这些新技术已成功制备并表征了InGaN微腔表面发光盖子。在制备的led中已经观察到微腔效应的证据。利用自组装生长技术，我们成功地在光激发下获得了具有InGaN量子点的边缘发射激光结构的激光作用。我们还在非常低的VIII比下建立了高质量和高密度的自组装GaN量子点。

We have developed fundamental technologies for current-injected GaN-based blue violet vertical-cavity surface-emitting lasers.1.Realization of high-reflectivity n-type AlGaN/GaN distributed Bragg reflectorWe have successfully grown high-reflectivity n-type AlGaN/GaN distributed Bragg reflectors by metalorganic chemical vapor deposition. The flow rate of carrier gases under the DBR growth has been found to be one of the most important parameters to improve uniformity of those samples. With this uniformity, as well as precise control of the growth temperature, we have obtained very high quality, electrically conductive DBRs with maximum reflectivity of over 99%.2.Development of device fabrication processes suitable for nitride semiconductor surface-emitting device arraysWe have developed double-layer photoresist techniques with good adhesive properties and undercut profiles. Using this technique, we can expel better productivity in GaN-based VCSEL array fabrication. InGaN microcavity surface-emitting LIDS with these newly-developed techniques have been successfully fabricated and characterized. Gear evidences of microcavity effects have been observed in the fabricated LEDs.3.Pioneered growth technologies for GaN-based quantum dotsUsing self-assembling growth technique, we have succeeded in obtaining lasing action in an edge-emitting laser structure with InGaN QDs under optical excitation. We have also established self-assembled GaN QDs of high quality and high density under very low VIII ratio.