Development of Integrated Analysis System for manufacturing high quality devices

本研究旨在开发一个用于制造高质量器件的集成分析系统，该系统包括用于单晶生长过程中位错密度分析的计算机代码，用于铸锭退火过程中位错密度分析的计算机代码，以及用于在晶片上制造器件的位错密度分析的计算机代码。在面向高质量器件制造的集成分析系统中，这些子系统依次连接，处理器件制造的全过程。以下是本研究的结果。(1)We开发了一个位错密度分析程序，其中忽略或近似考虑了晶体各向异性。(2)We提出了一个修正的Haasen-Alexander-Sumino（HAS）模型作为本构方程，以考虑位错的湮灭。在该模型中，位错密度随剪切应力方向的不同而有正值或负值 ...更多信息 该模型不仅能描述位错的增殖，而且能描述位错的湮灭。考虑了位错的种类，即螺型位错、刃型位错和混合型位错，提出了本构方程。我们将这些本构方程结合到铸锭退火过程的三维有限元计算机程序中，其中精确地考虑了晶体的各向异性。我们将该程序应用于GaAs和InP等化合物半导体晶体铸锭退火过程中位错密度的分析。(3)We利用改进的HAS模型，在Si衬底上GaAs薄膜沉积的位错密度分析程序中考虑了位错的湮灭。我们应用此计算机代码的快速热退火（RPA）过程中，位错的湮灭必须考虑在内。计算机程序成功地提供了减少位错密度的RPA过程中，这与实验观察。(4)We成功连接了以上三个子系统。少

The present research was performed to develop an integrated analysis system for manufacturing high quality devices, which comprises computer codes for the dislocation density analysis during single crystal growth process, for the dislocation density analysis during ingot annealing process, and for the dislocation density analysis during manufacturing devices on wafers. In the integrated analysis system for manufacturing high quality devices, these subsystems are sequentially connected to deal with the whole process of manufacturing devices. The following are results of the present research.(1)We developed a dislocation density analysis code, in which crystal anisotropy is neglected or approximately considered.(2)We proposed a modified Haasen-Alexander-Sumino (HAS) model as a constitutive equation to take account of the annihilation of dislocations. In this model, the dislocation density has a positive value or a negative value in accordance with the direction of the resolved shear stre … More ss, and the model is able to represent not only the dislocation multiplication but also the annihilation of dislocations. We also proposed the constitutive equation by considering the kinds of dislocations, i.e. screw dislocation, edge dislocation and mixed dislocation. We incorporated these constitutive equations into the three-dimensional finite element computer code for ingot annealing process, in which crystal anisotropy is exactly taken into account. We applied this computer code to the dislocation density analyses of compound semiconductor crystals such as GaAs and InP during ingot annealing process.(3)We utilized the modified HAS model to take account of the annihilation of dislocations in the dislocation density analysis code for GaAs thin film deposition on the Si substrate. We applied this computer code to the rapid thermal annealing (RPA) process, in which the annihilation of dislocations must be taken into account. The computer code successfully provides the decrease of dislocation density by the RPA process, which agrees with the experimental observation.(4)We successfully connected above three subsystems. Less