Preparation of Piezoelectric Thin Films with Nano domain Engineering

压电薄膜是MEMS应用中非常重要的元件。然而，它的压电响应比来自散体材料的预期要小。在MPB复合PZT中发现了沿{111}方向的巨压电性。在本研究中，本研究的目的是：1.研究大的压电性响应的来源.2.研究不含PZT的压电性响应.作为结果，获得了(100)-/(001)取向的薄膜，其体积分数小于50%.该薄膜具有较大的d_(t；t；33)&g_(t；)值，其来源被认为是外延生长的switching.2)Pb(Mg_&lt；1/3&gt；Nb_&lt；2/3&gt；)O_3-PbTiO_3[PMN-PT]薄膜中含有大量PT的区域。在薄膜的情况下，四方相和三方相之间的相变发生了位移。发现具有最大压电响应的PT含量也是changed.3)Pb(Zn_&lt；1/3&gt；Nb_&lt；2/3&gt；)O_3-PbTiO_3[PZN-PT]，这也是首次以薄膜的形式获得最大压电响应的PZN-PT。

Piezoelectric films are very important component for MEMS applications. However, its piezoresponse was smaller than expected one from bulk materials. We found the giant piezoelectricity along {111} direction in MPB-composition PZT. In the present study, the purpose of the present study is the following issues.1.Investigation of the origin of the large piezoresponse.2.Investigation of the piezoresponse without PZT.As results, the following results were obtained.1)(100)-/(001)- oriented films with (100) volume fraction less than 50% was obtained. This film shows large d_<33> value of 400 and its origin is considered to be the domain switching.2)Pb(Mg_<1/3>Nb_<2/3>)O_3-PbTiO_3 [PMN-PT] films with large PT content were epitaxially grown. Phase change between tetragonal and rhombohedral phases was shifted in case of films. The PT content showing maximum piezoelectric response was found to be also changed.3)Pb(Zn_<1/3>Nb_<2/3>)O_3-PbTiO_3 [PZN-PT], which reported to show the maximum piezoresponse in bulk, was first succeeded in film form.