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Development of plasma process equipment with pulsed plasma ablation technique

Development of plasma process equipment with pulsed plasma ablation technique
采用脉冲等离子体烧蚀技术的等离子体加工设备的开发
批准号:
20560267
负责人:
KIMURA Takashi
金额:
$2.91万
依托单位国家:
日本
项目类别:
Grant-in-Aid for Scientific Research (C)
财政年份:
2008
资助国家:
日本
项目状态:
已结题
起止时间:
2008 至 2010

项目摘要

项目成果

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中文摘要
翻译
通过暴露在脉冲等离子体中,在硅衬底上沉积薄的非晶碳膜,其中原料气体主要来自绝缘体的烧蚀。绝缘子烧蚀采用电热脉冲等离子体推进器作为脉冲等离子体,绝缘棒材料为聚四氟乙烯(PTFE)。用X射线光电子能谱分析了沉积薄膜的元素组成。测量光谱表明,氟F1s的含量大于碳C1s的含量。在拉曼光谱中,清楚地观察到两个非常宽的重叠带,这两个带归因于G(石墨)和D(无序)峰。由纳米压头测得的最大硬度约为7 Gpa。因此,应将该膜视为氟化类金刚石膜。
英文摘要
Thin amorphous carbon films are deposited on silicon substrates by exposure to pulsed plasmas where the feed gas is mainly generated from the ablation of an insulator. An electrothermal pulsed plasma thruster is used as the pulsed plasma for the ablation of the insulator, and the material of the insulator rod is polytetrafluoroethylene (PTFE). X-ray photoelectron spectroscopy is used in order to understand the elemental compositions of the deposited films. The measured spectra show that the fraction of fluorine F1s is larger than that of carbon C1s. In Raman spectra, two, very broad overlapping bands, which are attributed to the G (graphite) and D (disorder) peaks, are clearly observed. The maximum hardness measured by a nanoindenter is about 7 GPa. Therefore, the films should be regarded as fluorinated DLC films.
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会议论文
Application of pulsed plasma thruster to materials processing
脉冲等离子体推进器在材料加工中的应用
DOI: --
发表时间: 2009
期刊:
影响因子: --
作者: [T.Kimura, M.Iida, A.Oda]
通讯作者: A.Oda
DOI: --
发表时间:
期刊:
影响因子: --
作者: []
通讯作者:
Deposition of fluorinated diamond like carbonfilms using pulsed plasma thruster
使用脉冲等离子体推进器沉积氟化类金刚石碳膜
DOI: --
发表时间: 2010
期刊:
影响因子: --
作者: [木村高志, 飯田将康]
通讯作者: 飯田将康
DOI: 10.1143/jjap.50.08jd04
发表时间: 2011-08
期刊: Japanese Journal of Applied Physics
影响因子: 1.5
作者: [T. Kimura;M. Iida]
通讯作者: T. Kimura;M. Iida
共 10 条
    Preparation of functional hard coating materials by high density pulsed plasma ion implantation
    • 批准号:
      17K06298
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.08万
    • 财政年份:
      2017
    • 负责人:
      KIMURA Takashi
    • 依托单位:
    Development of equipment for multi-purpose materials processing by ions produced in high-density pulsed discharge plasmas
    • 批准号:
      26420230
    • 项目类别:
      Grant-in-Aid for Scientific Research (C)
    • 资助金额:
      $3.16万
    • 财政年份:
      2014
    • 负责人:
      KIMURA Takashi
    • 依托单位:
    Innovative multiple-bit information writing using local pure spin current injection
    • 批准号:
      23651150
    • 项目类别:
      Grant-in-Aid for Challenging Exploratory Research
    • 资助金额:
      $2.41万
    • 财政年份:
      2011
    • 负责人:
      KIMURA Takashi
    • 依托单位:
    Development of hard deformable focusing mirror for general-purpose hard X-ray optics.
    • 批准号:
      23860001
    • 项目类别:
      Grant-in-Aid for Research Activity Start-up
    • 资助金额:
      $1.83万
    • 财政年份:
      2011
    • 负责人:
      KIMURA Takashi
    • 依托单位:
    海外基金