Underpinning Power Electronics switch optimisation Theme

碳化硅（SiC）N沟道IGBT具有实现新型高效中压（10 kV+）应用的潜力，例如智能电网和HVDC，从而实现低碳社会。然而，到目前为止，只有四个研究小组报告了他们的成功开发，由于与他们的制造相关的相当大的挑战。利用由SiC材料、模拟和制造领域的专家组成的联盟，并建立在SiC MOSFET、Si IGBT和SiC材料研究的最新历史基础上，支撑电力电子的开关优化主题的目标是成为欧洲和世界上第一批开发这些器件的团体之一，并推动迄今为止在这一新兴领域取得的成就。一旦作为该项目的第一个里程碑开发出质量基准的~15 kV SiC IGBT工艺，该工艺将被修改以探索迄今尚未探索的领域，包括开发以SiC MOSFET为基准的较低电压（5-10 kV）SiC IGBT、沟槽SiC IGBT和新型拓扑结构（如混合SiC MOSFET-IGBT）。该联盟将共同努力实现这些雄心勃勃的目标，工作包将按专业知识（材料开发，模拟，制造和测试）划分，以实现每个目标。

Silicon carbide (SiC) N-channel IGBTs have the potential to enable new and highly efficient ultrahigh voltage (10 kV+) applications such as the Smart Grid and HVDC, enabling a low carbon society. However, to date, only four research groups have reported on their successful development, due to the considerable challenge associated with their fabrication. Exploiting a consortium made up of experts from the fields of SiC materials, simulation and fabrication, and building on a recent history of SiC MOSFET, Si IGBT and SiC materials research, the aim of the Switch Optimisation theme of Underpinning Power Electronics is to be amongst the first groups in Europe and the world to develop these devices, and to push the boundaries of what has been achieved in this fledgling field to date. Once a quality benchmarked ~15 kV SiC IGBT process is developed as the first milestone in this project, the process will be modified to explore areas not to-date explored, including the development of lower voltage (5-10 kV) SiC IGBTs benchmarked to SiC MOSFETs, trench SiC IGBTs, and novel topologies such as hybrid SiC MOSFET-IGBTs. The consortium will all work together towards these ambitious goals, with the work packages split by expertise (materials development, simulation, fabrication and testing) to cut across each of the objectives.