Atomic Scale Simulation of Nanoelectronic Devices
Atomic Scale Simulation of Nanoelectronic Devices
批准号:
EP/E038344/1
负责人:
Asen Asenov
金额:
$151.6万
依托单位:
依托单位国家:
英国
项目类别:
Research Grant
财政年份:
2007
资助国家:
英国
项目状态:
已结题
起止时间:
2007 至 --
中文摘要
自2002年6月推出Grant平台以来,格拉斯哥器件建模小组(GDMG)已成长为学术界最大和最有影响力的专业半导体器件建模小组之一。该小组的议程是模拟纳米CMOS器件中电荷和物质的离散性引入的内禀参数波动,以及基于非平衡格林函数(NEGF)形式的量子力学输运模拟器的开发。在平台授予期间,该小组成员发表了190多篇论文,并进行了44次特邀演讲。该集团拥有来自EPSRC、欧盟的330万人的均衡研究组合,并与SEMATECH、索尼和富士通签订了合同。该小组的核心成员仍然是3名学者,已从赠款开始时的4名PDRA发展到目前的2名EPSRC高级研究员和7名PDRA。积极的行业合作包括IBM、飞思卡尔、国家半导体、Synopsys、英飞凌、皇家飞利浦电子、意法半导体、索尼、富士通、ARM和沃尔夫森微电子。新提案旨在为关键的PDRA提供连续性,并为训练有素的英国博士进入PDRA阶梯提供便利。它还旨在通过培训现有的集团成员、进行新的任命和促进战略合作来填补GDMG专业知识方面的空白。我们已经确定了一些研究领域,这些领域对未来的集团发展很重要,但由于缺乏具体的记录或研究的投机性、概念验证性质,最初将难以通过标准的响应性拨款建议提供资金。这些新领域包括:(1)将非弹性散射纳入格拉斯哥NEGF程序及其原子水平的表述;(2)开发本地获取固有参数波动数据的紧凑模型;(3)开发针对各种通道材料、应变条件和晶体取向的第一性原理能带结构模拟方面的专门知识;(4)通过增强用户界面、稳健性和内部数据结构的粘合以促进格拉斯哥‘原子’漂移扩散(DD)和蒙特卡洛(MC)模拟器之间的中期结果传输,改进了格拉斯哥程序的商业可用性。
英文摘要
Since the launch of its Platform Grant in June 2002 the Glasgow Device Modelling Group (GDMG) has grown to become one of the largest and most influential specialised semiconductor device modelling groups in academia. The group sets the agenda in the simulation of intrinsic parameter fluctuations introduced by the discreteness of charge and matter in nano CMOS devices, and in the development of quantum mechanical transport simulators based on the Non-Equilibrium Green's Function (NEGF) formalism. During the platform grant period members of the group has published more than 190 papers and have given more than 44 invited talks. The group has a balanced research portfolio of 3.3M from EPSRC, the EU and present contracts with SEMATECH, Sony and Fujitsu. Maintaining its core membership of 3 academics, the group has grown from 4 PDRAs at the inception of the Grant to a present total of 2 Advanced EPSRC Fellows and 7 PDRAs. Active industrial collaborations include IBM, Freescale, National Semiconductor, Synopsys, Infineon, Royal Philips Electronics, ST Microelectronics, Sony, Fujitsu, ARM and Wolfson Microelectronics. The new proposal aims to provide continuity for key PDRAs and to ease the path of trained UK PhDs onto the PDRA ladder. It also aims to fill gaps in GDMG expertise by training existing group members, making new appointments and facilitating strategic collaborations. We have identified areas of research which are important for future group development but which will be difficult to resource initially through standard responsive grant proposals, either due to a lack of specific track record or due to the speculative, proof of concept nature of the research. These new areas include: (i) the inclusion of inelastic scattering into the Glasgow NEGF code, and its atomic-level formulation; (ii) development of compact models that natively access data on intrinsic parameter fluctuations; (iii) development of expertise in first-principles band structure simulation for diverse sets of channel materials, strain conditions and crystal orientations; (iv) improvements to the commercial usability of the Glasgow codes by enhancing user interfaces, robustness and the cohering of internal data structures to facilitate the transfer of interim results between the Glasgow 'atomistic' drift diffusion (DD) and Monte Carlo (MC) simulators.
期刊论文(10)
专著(0)
科研奖励(0)
会议论文
DOI:
10.1109/ted.2014.2363117
发表时间:
2015-06
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[A. Asenov;B. Cheng;Xingsheng Wang;A. Brown;C. Millar;C. Alexander;S. Amoroso;J. B. Kuang;S. Nassif]
通讯作者:
A. Asenov;B. Cheng;Xingsheng Wang;A. Brown;C. Millar;C. Alexander;S. Amoroso;J. B. Kuang;S. Nassif
DOI:
10.1109/ted.2011.2157929
发表时间:
2011-07
期刊:
IEEE Transactions on Electron Devices
影响因子:
3.1
作者:
[A. Martinez;M. Aldegunde;N. Seoane;A. Brown;J. Barker;A. Asenov]
通讯作者:
A. Martinez;M. Aldegunde;N. Seoane;A. Brown;J. Barker;A. Asenov
Realistic fault modelling to enable optimization of low power IoT and Cognitive fault-tolerant computing systems
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批准号:EP/T023244/1
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项目类别:Research Grant
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资助金额:$56.86万
-
财政年份:2021
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负责人:Asen Asenov
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依托单位:
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依托单位:
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财政年份:2014
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依托单位:
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财政年份:2013
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依托单位:
ENIAC MOdeling and DEsign of Reliable, process variation-aware Nanoelectronic devices, circuits and systems (MODERN)
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资助金额:$91.28万
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财政年份:2009
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依托单位:
Renaissance Germanium
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资助金额:$47.41万
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财政年份:2008
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依托单位:
Novel Time-Resolved Thermal Imaging: AlGaN/GaN Heterostructure Field Effect Transistors
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批准号:EP/D04698X/1
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资助金额:$11.91万
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财政年份:2006
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依托单位:
Meeting the design challenges of the nano-CMOS electronics
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资助金额:$249.23万
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财政年份:2006
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负责人:Asen Asenov
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依托单位:
国内基金
海外基金
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批准号:22108101
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项目类别:青年科学基金项目(C类)
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资助金额:30.0万元
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批准年份:2021
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负责人:靳光远
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依托单位:
基于Multi-Scale模型的轴流血泵瞬变流及空化机理研究
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资助金额:22.0万元
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项目类别:面上项目
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依托单位: