SaTC: Collaborative: Exploiting Spintronics for Security, Trust and Authentication

SaTC：协作：利用自旋电子学实现安全、信任和身份验证

• 批准号: 1722557
• 负责人: Swaroop Ghosh
• 金额: $ 22.9万
• 依托单位: Pennsylvania State Univ University Park
• 依托单位国家: 美国
• 项目类别: Standard Grant
• 财政年份: 2016
• 资助国家: 美国
• 起止时间: 2016-09-26 至 2019-08-31
• 项目状态: 已结题
• 来源: https://www.nsf.gov/awardsearch/showAward?AWD_ID=1722557&HistoricalAwards=false
• 关键词: SaTC; Collaborative; Exploiting; Spintronics; Security

The Complementary Metal Oxide Semiconductor (CMOS) based security primitives typically suffer from area/power overhead, sensitivity to environmental fluctuations and limited randomness and entropy offered by Silicon substrate. Spintronic circuits can complement the existing CMOS based security and trust infrastructures. This project explores ways to uncover the security specific properties of the magnetic nanowire and capture them in detailed circuit model.This project investigates noise sources and randomness present in the magnetic nanowire, and engineers new techniques to harvest the entropy. The investigators combine the circuits and models of non-linear magnetic dynamics to realize hardware security primitives and engines and experimentally validating the models and design ideas under harsh conditions and attack scenarios. The techniques developed in this project will improve the security and energy-efficiency of future circuits and systems.

基于互补金属氧化物半导体（CMOS）的安全基元通常遭受面积/功率开销、对环境波动的敏感性以及由硅衬底提供的有限随机性和熵。自旋电子电路可以补充现有的基于CMOS的安全和信任基础设施。本项目旨在探索如何揭示磁性纳米线的安全特性，并将其捕获到详细的电路模型中。本项目研究了磁性纳米线中存在的噪声源和随机性，并设计了新的技术来获取熵。研究人员将非线性磁动力学的电路和模型结合起来，以实现硬件安全原语和引擎，并在恶劣条件和攻击场景下通过实验验证模型和设计思想。该项目开发的技术将提高未来电路和系统的安全性和能效。

项目成果

Novel Magnetic Burn-In for Retention and Magnetic Tolerance Testing of STTRAM

用于 STTRAM 保持力和磁容差测试的新型磁力老化

• DOI: 10.1109/tvlsi.2018.2820508
• 发表时间: 2018
• 期刊: IEEE Transactions on Very Large Scale Integration (VLSI
• 作者: Khan, Mohammad Nasim;Iyengar, Anirudh S.;Ghosh, Swaroop
• 通讯作者: Ghosh, Swaroop

Test challenges and solutions for emerging non-volatile memories

新兴非易失性存储器的测试挑战和解决方案

• DOI: 10.1109/vts.2018.8368632
• 发表时间: 2018
• 期刊: VLSI Test Symposium (VTS
• 作者: Khan, Mohammad Nasim;Ghosh, Swaroop
• 通讯作者: Ghosh, Swaroop

Test of Supply Noise for Emerging Non-Volatile Memory

新兴非易失性存储器的电源噪声测试

• DOI: 10.1109/test.2018.8624896
• 发表时间: 2018
• 期刊: IEEE International Test Conference (ITC
• 作者: Khan, Mohammad Nasim;Ghosh, Swaroop
• 通讯作者: Ghosh, Swaroop

Magnetic Tunnel Junction Reliability Assessment Under Process Variations and Activity Factors and Mitigation Techniques

工艺变化和活动因素下的磁隧道结可靠性评估及缓解技术

• DOI: 10.1166/jolpe.2018.1560
• 发表时间: 2018
• 期刊: Journal of Low Power Electronics
• 作者: Iyengar, Anirudh S.;Ghosh, Swaroop;Rathi, Nitin
• 通讯作者: Rathi, Nitin

Fault injection attacks on emerging non-volatile memory and countermeasures

新兴非易失性存储器的故障注入攻击及对策

• DOI: 10.1145/3214292.3214302
• 发表时间: 2018
• 期刊: International Workshop on Hardware and Architectural Support for Security and Privacy
• 作者: Khan, Mohammad Nasim;Ghosh, Swaroop
• 通讯作者: Ghosh, Swaroop