Aluminum Nitride for vertical Power Electronics

用于立式电力电子器件的氮化铝

• 批准号: 462737320
• 负责人: Professor Dr. Andreas Waag
• 金额: --
• 依托单位: Institut für Halbleitertechnik
• 依托单位国家: 德国
• 项目类别: Priority Programmes
• 资助国家: 德国
• 项目状态: 未结题
• 来源: https://gepris.dfg.de/gepris/projekt/462737320?language=en
• 关键词: Aluminum; Nitride; vertical; Power; Electronics

This project is aiming at vertical device concepts based on Aluminum Nitride (AlN) for increased breakdown voltages in nitride power electronics. The large band gap and its high breakdown fields make AlN a very interesting material for power electronics. In addition, AlN is one of the few compound semiconductors, which is curing its crystal lattice during high temperature annealing under normal pressure atmosphere, much like in silicon technology. The main objective of this project is to develop suitable vertical transistor concepts based on AlN technology and transfer these concepts into devices, building up a knowledge base on AlN technology for power electronics, as well as demonstrating prototype devices for the integration into circuits and systems in a second phase.

该项目旨在基于氮化铝（AlN）的垂直器件概念，以提高氮化电力电子器件的击穿电压。大带隙和高击穿场使氮化铝成为电力电子领域非常有趣的材料。此外，AlN是为数不多的在常压气氛下高温退火过程中固化其晶格的化合物半导体之一，就像硅技术一样。该项目的主要目标是基于AlN技术开发合适的垂直晶体管概念，并将这些概念转化为器件，为电力电子建立AlN技术的知识库，并在第二阶段展示集成到电路和系统中的原型器件。