Aluminum Nitride for vertical Power Electronics

点击翻译按钮获取中文摘要

This project is aiming at vertical device concepts based on Aluminum Nitride (AlN) for increased breakdown voltages in nitride power electronics. The large band gap and its high breakdown fields make AlN a very interesting material for power electronics. In addition, AlN is one of the few compound semiconductors, which is curing its crystal lattice during high temperature annealing under normal pressure atmosphere, much like in silicon technology. The main objective of this project is to develop suitable vertical transistor concepts based on AlN technology and transfer these concepts into devices, building up a knowledge base on AlN technology for power electronics, as well as demonstrating prototype devices for the integration into circuits and systems in a second phase.