权益分类	功能权益	普通用户	{{item.name}}会员
{{category.name}}	{{benefitItem.name}}

Control and Device Application of 2D Electrons and Holes in Polytype Heterostructures

多型异质结构中二维电子和空穴的控制与器件应用

基本信息

批准号：
01550027
负责人：
INOUE Masataka
金额：
$ 1.34万
依托单位：
Osaka Institute of Technology
依托单位国家：
日本
项目类别：
Grant-in-Aid for General Scientific Research (C)
财政年份：
1989
资助国家：
日本
起止时间：
1989 至 1990
项目状态：
已结题

来源：
https://kaken.nii.ac.jp/grant/KAKENHI-PROJECT-01550027/
关键词：
Heterostructure MBE High speed Device 高速電子輸送分子線エピタキシ-

项目摘要

Polytype heterostructures GaSb/InAs/AlGaSb have been grown by molecular beam epitaxy (MBE). We have studied MBE growth conditions and process to obtain sharp heterointerfaces by the instantaneous shatter operations of molecular beams of III and V elements. In order to characterize heterostructures grown by MBE, optical spectroscopy such as photoluminescence and Raman scattering and Hall measurements have been done to optimize the detailed heterostructures for device applications.There is a trade off between process feasibility and the electrical performance in the design of InAs/AlGaSb heterostructures ; process feasibility requires lower aluminum content to avoid undesirable reaction, while higher aluminum content is preferred for improved electrical characteristics. To meet both requirements for an optimized heterostructure, we have grown three typical InAs quantum well structures and compared electron transport properties. The optimize InAs SQW structure with 60AAISb barrier has been fabricated for high speed FET. A 1.7mum-gate-length FET with this optimized structure showed a very high transconductance of more than 460mS/mm at room temperature. Higher transconductance and drain current increase in the high drain voltage indicate the increased carrier concentration as observed by the pulsed Hall measurements.In order to control the distribution of electrons and holes near the InAs/AlGaSb interface, we have measured photoluminescence under an external electric field across the interface. Most of electrons and holes distribute separately in adjacent layers recombine to emit photons. The blue-shift of the PL peak to higher energies has been observed for the first time with increasing external fields. This stark shift has been interpreted by the modulation of wave functions of electrons and holes, and also the shift of 2D energy states. This effect will be applicable for highーspeed opto-electric devices.

多型异质结构 GaSb/InAs/AlGaSb 已通过分子束外延 (MBE) 生长。我们研究了MBE生长条件和过程，通过III族和V族元素分子束的瞬时粉碎操作获得尖锐的异质界面。为了表征MBE生长的异质结构，进行了光致发光、拉曼散射和霍尔测量等光学光谱，以优化器件应用的详细异质结构。在InAs/AlGaSb异质结构的设计中，工艺可行性和电性能之间需要权衡；工艺可行性要求较低的铝含量以避免不良反应，而较高的铝含量则可改善电气特性。为了满足优化异质结构的这两个要求，我们生长了三种典型的 InAs 量子阱结构并比较了电子传输特性。已为高速 FET 制造了具有 60AAISb 势垒的优化 InAs SQW 结构。具有这种优化结构的 1.7μm 栅极长度 FET 在室温下表现出超过 460mS/mm 的非常高的跨导。通过脉冲霍尔测量观察到，高漏极电压下的较高跨导和漏极电流增加表明载流子浓度增加。为了控制 InAs/AlGaSb 界面附近电子和空穴的分布，我们测量了界面上外部电场下的光致发光。大多数电子和空穴分别分布在相邻层中重新组合以发射光子。随着外部场的增加，首次观察到 PL 峰向更高能量的蓝移。这种明显的转变可以通过电子和空穴的波函数的调制以及二维能态的转变来解释。这种效应将适用于高速光电器件。